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이병훈 사진
교원에 대한 정보를 나타내는 표입니다.
성명 이병훈
소속 전자전기공학과
전화번호 054-279-2217
E-mail bhlee1@postech.ac.kr
Homepage http://eesl.postech.ac.kr

학력

  • 1997.03 ~ 2000.12 UNIV. OF TEXAS AT AUSTIN (박사-반도체)
  • 1989.09 ~ 1992.02 한국과학기술원 (석사-물리학)
  • 1986.03 ~ 1989.08 한국과학기술원 (학사-물리학)

주요경력

  • 2008.10 ~ 2020.11 : GIST 신소재공학부
  • 2007.09 ~ 2008.10 : SEMATECH
  • 2001.01 ~ 2007.08 : IBM

전문분야

학술지

국제전문학술지

  • High-responsivity PtSe2 photodetector enhanced by photogating effect, APPLIED PHYSICS LETTERS, , 118, - (2021)
  • Unveiling the Role of Al2O3 Interlayer in Indium–Gallium–Zinc–Oxide Transistors, Physica Status Solidi (A) Applications and Materials Science, , , - (2021)
  • Impact of Post-Metal Annealing With Deuterium or Nitrogen for Curing a Gate Dielectric Using Joule Heat Driven by Punch-Through Current, IEEE ELECTRON DEVICE LETTERS, , 42, 276-279 (2021)
  • Dynamic band alignment modulation of ultrathin WOx/ZnO stack for high on/off ratio field-effect switching applications, NANOSCALE, , 12, 16755-16761 (2020)
  • Direct writing of graphite thin films by laser-assisted chemical vapor deposition, CARBON, , 169, 163-171 (2020)
  • Bias-Modulated Multicolor Discrimination Enabled by an Organic-Inorganic Hybrid Perovskite Photodetector with a p-i-n-i-p Configuration, LASER &PHOTONICS REVIEWS, , 14, - (2020)
  • Quantitative Analysis of High-Pressure Deuterium Annealing Effects on Vertically Stacked Gate-All-Around SONOS Memory, IEEE TRANSACTIONS ON ELECTRON DEVICES, , 67, 3903-3907 (2020)
  • Quantitative defect density extraction method for metal-insulator-metal capacitor, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, , 35, - (2020)
  • Channel Defect Profiling and Passivation for ZnO Thin-Film Transistors, NANOMATERIALS, , 10, - (2020)
  • Performance Degradation in Graphene-ZnO Barristors Due to Graphene Edge Contact, ACS APPLIED MATERIALS & INTERFACES, , 12, 28768-28774 (2020)
  • Gate-Modulated Ultrasensitive Visible and Near-Infrared Photodetection of Oxygen Plasma-Treated WSe2 Lateral pn-Homojunctions, ACS APPLIED MATERIALS & INTERFACES, , 12, 23261-23271 (2020)
  • MXenes for future nanophotonic device applications, NANOPHOTONICS, , 9, 1831-1853 (2020)
  • Tunable in-plane thermal conductivity of a single PEDOT:PSS nanotube, NANOSCALE, , 12, 8701-8705 (2020)
  • High-quality nitrogen-doped graphene films synthesized from pyridine via two-step chemical vapor deposition, CARBON, , 159, 579-585 (2020)
  • Scalable Two-Dimensional Lateral Metal/Semiconductor Junction Fabricated with Selective Synthetic Integration of Transition-Metal-Carbide (Mo2C)/-Dichalcogenide (MoS2), ACS APPLIED MATERIALS & INTERFACES, , 11, 47190-47196 (2019)
  • Low-Power Complementary Logic Circuit Using Polymer-Electrolyte-Gated Graphene Switching Devices, ACS APPLIED MATERIALS & INTERFACES, , 11, 47247-47252 (2019)
  • Hot-Carrier Degradation Estimation of a Silicon-on-Insulator Tunneling FET Using Ambipolar Characteristics, IEEE ELECTRON DEVICE LETTERS, , 40, 1716-1719 (2019)
  • Mechanically robust antireflective moth-eye structures with a tailored coating of dielectric materials, OPTICAL MATERIALS EXPRESS, , 9, 4178-4186 (2019)
  • Tunable AC/DC converter using graphene-germanium barristor based half-wave rectifier, AIP ADVANCES, , 9, - (2019)
  • Enhanced Photo-Response of Mos(2) Photodetectors by a Laterally Aligned SiO2 Nanoribbon Array Substrate, CHEMNANOMAT, , 5, 1272-1279 (2019)
  • Plasmonic Transition Metal Carbide Electrodes for High-Performance InSe Photodetectors, ACS NANO, , 13, 8804-8810 (2019)
  • CMOS technology on another level, NATURE ELECTRONICS, , 2, 272-273 (2019)
  • Avalanche Carrier Multiplication in Multilayer Black Phosphorus and Avalanche Photodetector, SMALL, , 15, - (2019)
  • Threshold Voltage Modulation of a Graphene-ZnO Barristor Using a Polymer Doping Process, ADVANCED ELECTRONIC MATERIALS, , 5, - (2019)
  • Transition-Metal-Carbide (Mo2C) Multiperiod Gratings for Realization of High-Sensitivity and Broad-Spectrum Photodetection, ADVANCED FUNCTIONAL MATERIALS, , 29, - (2019)
  • Interface state degradation during AC positive bias temperature instability stress, SOLID-STATE ELECTRONICS, , 158, 46-50 (2019)
  • High-Responsivity Near-Infrared Photodetector Using Gate-Modulated Graphene/Germanium Schottky Junction, ADVANCED ELECTRONIC MATERIALS, , 5, - (2019)
  • ZnO composite nanolayer with mobility edge quantization for multi-value logic transistors, NATURE COMMUNICATIONS, , 10, - (2019)
  • Chemically doped graphene based ternary field effect transistors, JAPANESE JOURNAL OF APPLIED PHYSICS, , 58, - (2019)
  • Enhancement of Ferroelectric Properties of Superlattice-Based Epitaxial BiFeO3 Thin Films via Substitutional Doping Effect, JOURNAL OF PHYSICAL CHEMISTRY C, , 123, 11564-11571 (2019)
  • Piezoelectrically modulated touch pressure sensor using a graphene barristor, JAPANESE JOURNAL OF APPLIED PHYSICS, , 58, - (2019)
  • Advantages of a buried-gate structure for graphene field-effect transistor, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, , 34, - (2019)
  • Reversible magnetoelectric switching in multiferroic three-dimensional nanocup heterostructure films, NPG ASIA MATERIALS, , 11, - (2019)
  • Contact Resistance Reduction of WS2 FETs Using High-Pressure Hydrogen Annealing, IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, , 6, 164-168 (2018)
  • Growth of Centimeter-Scale Monolayer and Few-Layer WSe2 Thin Films on SiO2/Si Substrate via Pulsed Laser Deposition, ADVANCED MATERIALS INTERFACES, , 5, - (2018)
  • HfO2/HfS2 hybrid heterostructure fabricated via controllable chemical conversion of two-dimensional HfS2, NANOSCALE, , 10, 18758-18766 (2018)
  • Operation Mechanism of a MoS2/BP Heterojunction FET, NANOMATERIALS, , 8, - (2018)
  • Very-Low-Temperature Integrated Complementary Graphene-Barristor-Based Inverter for Thin-Film Transistor Applications, ANNALEN DER PHYSIK, , 530, - (2018)
  • Facile process to clean PMMA residue on graphene using KrF laser annealing, AIP ADVANCES, , 8, - (2018)
  • Reliable peripheral anchor-assisted transfer printing of ultrathin SiO2 for a transparent and flexible IGZO-based inverter, MICROELECTRONIC ENGINEERING, , 197, 15-22 (2018)
  • Flexible Transparent Nanogenerators Utilizing Shape-Modulated ZnO Nanorod Arrays on Graphene Electrodes, ADVANCED MATERIALS TECHNOLOGIES, , 3, - (2018)
  • Dielectric Dispersion and High Field Response of Multilayer Hexagonal Boron Nitride, ADVANCED FUNCTIONAL MATERIALS, , 28, - (2018)
  • Contact resistance reduction of ZnO thin film transistors (TFTs) with saw-shaped electrode, NANOTECHNOLOGY, , 29, - (2018)
  • Charge transfer in graphene/polymer interfaces for CO2 detection, NANO RESEARCH, , 11, 3529-3536 (2018)
  • Quantitative Analysis of Deuterium Annealing Effect on Poly-Si TFTs by Low Frequency Noise and DC I-V Characterization, IEEE TRANSACTIONS ON ELECTRON DEVICES, , 65, 1640-1644 (2018)
  • Gate-Controlled Graphene-Silicon Schottky Junction Photodetector, SMALL, , 14, - (2018)
  • Chemically induced Fermi level pinning effects of high-k dielectrics on graphene, SCIENTIFIC REPORTS, , 8, - (2018)
  • Effect of ribbon width on electrical transport properties of graphene nanoribbons, NANO CONVERGENCE, , 5, - (2018)
  • Unique reliability characteristics of fully depleted silicon-on-insulator tunneling FET, JAPANESE JOURNAL OF APPLIED PHYSICS, , 57, - (2018)
  • Generalized Scheme for High Performing Photodetectors with a p-Type 2D Channel Layer and n-Type Nanoparticles, SMALL, , 14, - (2018)
  • Zero-Bias Operation of CVD Graphene Photodetector with Asymmetric Metal Contacts, ACS PHOTONICS, , 5, 365-370 (2018)
  • High-pressure oxygen annealing of Al2O3 passivation layer for performance enhancement of graphene field-effect transistors, NANOTECHNOLOGY, , 29, - (2018)
  • Tunable graphene doping by modulating the nanopore geometry on a SiO2/Si substrate, RSC ADVANCES, , 8, 9031-9037 (2018)
  • Graphene-ZnO: N barristor on a polyethylene naphthalate substrate, AIP ADVANCES, , 8, - (2018)
  • Epitaxial Synthesis of Molybdenum Carbide and Formation of a Mo2C/MoS2 Hybrid Structure via Chemical Conversion of Molybdenum Disulfide, ACS NANO, , 12, 338-346 (2018)
  • Tailoring Crystallographic Orientations to Substantially Enhance Charge Separation Efficiency in Anisotropic BiVO4 Photoanodes, ACS CATALYSIS, , 8, 5952-5962 (2018)
  • Ternary Full Adder Using Multi-Threshold Voltage Graphene Barristors, IEEE Electron Device Letters, , 39, 1948-1951 (2018)

국내전문학술지

일반학술지

학술회의논문

학회발표

단행본

연구실적

  • 이병훈 신규부임교수 기자재지원(1차_학과), 포항공과대학교 (2020-2022)
  • 이병훈 신규부임교수 기자재지원(1차_대학), 포항공과대학교 (2020-2021)
  • 이병훈 신규부임교수 연구비지원(1차_학과), 포항공과대학교 (2020-2021)
  • 멀티레벨 소재 설계 및 응용연구, 재단법인한국연구재단 (2020-2021)
  • 3D 집적 반도체소재 원천기술 및 응용 연구, 재단법인한국연구재단 (2020-2020)
  • 그래핀 배리스터 기반 삼진로직 소자 개발 및 집적공정 연구, 재단법인한국연구재단 (2020-2020)
  • 3D 집적 반도체소재 원천기술 및 응용연구, 재단법인한국연구재단 (2021-2021)
  • 멀티레벨 소재 설계 및 응용연구, 재단법인한국연구재단 (2021-2021)
  • 그래핀 배리스터 기반 삼진로직 소자 개발 및 집적공정 연구, 재단법인한국연구재단 (2021-2021)
  • 학생인건비통합관리과제, 광주과학기술원 (2021-2040)
  • 이병훈 신규부임교수 초기정착비(2차_대학), 포항공과대학교 (2021-2022)
  • 이병훈 신규부임교수 연구비지원(2차_학과), 포항공과대학교 (2021-2022)
  • 이병훈 신규부임교수 초기정착비(2차_대학), 포항공과대학교 (2021-2022)
  • 4.21048_이월과제, 재단법인한국연구재단 (2021-2021)
  • 공공나노팹의 R&D역량 강화를 위한 사전기획 연구, 재단법인한국연구재단 (2021-2022)
  • 4.20977_이월과제, 재단법인한국연구재단 (2021-2021)
  • 4.21032_이월과제, 재단법인한국연구재단 (2021-2021)
  • 한국형 나노.반도체 종합연구소 구축방안 마련 기획연구, 재단법인한국연구재단 (2021-2023)
  • 3D 집적 반도체소재 원천기술 및 응용연구, 재단법인한국연구재단 (2022-2022)
  • R_직접비_10159740_ATOMIC/MOLECULAR LAYER DEPOSITION, 포항공과대학교 (2022-2023)
  • R_직접비_10159962_ATOMIC LAYER DEPOSITION, 포항공과대학교 (2022-2023)
  • R_직접비_10159965_E-BEAM&THERMAL EVAPORATOR, 포항공과대학교 (2022-2023)
  • R_직접비_10161024_PARAMETER ANALYZER, 포항공과대학교 (2022-2023)
  • 4.0021069/4.22306_이월과제, 재단법인한국연구재단 (2022-2022)
  • 반도체공학과 겸임교원 학술지원비, 포항공과대학교 (2022-2023)
  • 반도체공학과 겸임교원 학술지원비, 포항공과대학교 (2022-2023)

IP

  • 이병훈,이용수, 멀티레벨 소자 및 이의 제조방법, 한국, 10-2022-0078412 (2022)
  • 이병훈,김승모,Some Surajit, 유전체 박막의 제조방법, 한국, 10-2021-0072887 (2021)