교원프로필

이정수 사진
교원에 대한 정보를 나타내는 표입니다.
성명 이정수
소속 전자전기공학과
전화번호 279-2380
E-mail ljs6951@postech.ac.kr
Homepage http://ndp.postech.ac.kr/

학력

  • 1993.03 ~ 1996.02 포항공과대학교 (박사-전자전기공학과)
  • 1991.03 ~ 1993.02 포항공과대학교 (석사-전자전기공학과)
  • 1987.03 ~ 1991.02 포항공과대학교 (학사-전자전기공학과)

주요경력

  • 2005.09 ~ 2008.07 : 전북대학교 반도체과학기술학과
  • 2002.10 ~ 2005.08 : University of Texas at Dallas
  • 2001.08 ~ 2002.09 : University of California at Berkeley
  • 1996.03 ~ 2001.03 : 삼성전자(주) 반도체

전문분야

학술지

국제전문학술지

  • Caution: Abnormal Variability Due to Terrestrial Cosmic Rays in Scaled-Down FinFETs, IEEE TRANSACTIONS ON ELECTRON DEVICES, , 66, 1887-1891 (2019)
  • Soft Error in Saddle Fin Based DRAM, IEEE Electron Device Letters, , 40, 494-497 (2019)
  • Highly Sensitive Detection of Influenza A (H1N1) Virus With Silicon Nanonet BioFETs, IEEE SENSORS JOURNAL, , 19, 10985-10990 (2019)
  • Threshold voltage variation depending on single grain boundary and stored charges in an adjacent cell for vertical silicon-oxide-nitride-oxide-silicon (SONOS) NAND flash memory, JAPANESE JOURNAL OF APPLIED PHYSICS, , 57, - (2018)
  • Systematic analysis of oxide trap distribution of 4H-SiC DMOSFETs using TSCIS and its correlation with BTI and SILC behavior, SOLID-STATE ELECTRONICS, , 140, 18-22 (2018)
  • Analog Figure-of-Merits Comparison of Gate Workfunction Variability and Random Discrete Dopant Between Inversion-Mode and Junctionless Nanowire FETs, JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, , 18, 6598-6601 (2018)
  • Impact of geometrical parameters on the electrical performance of network-channel polycrystalline silicon thin-film transistors, JAPANESE JOURNAL OF APPLIED PHYSICS, , 57, - (2018)
  • Electrical Characteristics and pH Response of a Parylene-H Sensing Membrane in a Si-Nanonet Ion-Sensitive Field-Effect Transistor, Sensors, , 18, - (2018)
  • Single-Event Transient in FinFETs and Nanosheet FETs, IEEE ELECTRON DEVICE LETTERS, , 39, 1840-1843 (2018)
  • Buffer effects of two functional groups against pH variation at aminosilanized Electrolyte-Oxide-Semiconductor (EOS) capacitor, Sensors and Actuators B: Chemical, , 242, 324-331 (2017)
  • Work function consideration in vacuum field emission transistor design, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, , 35, - (2017)
  • Investigation of Hot-Carrier Reliability in Junctionless Polysilicon Thin-Film Transistors, JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, , 17, 3375-3377 (2017)
  • Electrical characteristics of tunneling field-effect transistors with asymmetric channel thickness, JAPANESE JOURNAL OF APPLIED PHYSICS, , 56, 24201-1-24201-5 (2017)
  • Effects of single grain boundary and random interface traps on electrical variations of sub-30 nm polysilicon nanowire structures, MICROELECTRONIC ENGINEERING, , 149, 113-116 (2016)
  • Silicon nanowire biosensors for detection of cardiac troponin I (cTnI) with high sensitivity, BIOSENSORS & BIOELECTRONICS, , 77, 695-701 (2016)
  • Design guidelines for nanoscale vacuum field emission transistors, Journal of Vacuum Science & Technology B, , 34, - (2016)
  • Highly Enhanced Performance of Network-Channel Polysilicon Thin-Film Transistors, IEEE Electron Device Letters, , , - (2016)
  • Electrical Characteristics of Top-Gated Graphene Field Effect Transistors Fabricated on Stainless Steel (STS) Substrate, Journal of Nanoscience and Nanotechnology, , 16, 5159-5163 (2016)
  • A Reconfigurable and Portable Highly Sensitive Biosensor Platform for ISFET and Enzyme-based Sensors, IEEE Sensors Journal, , 16, 4443-4451 (2016)
  • Silicon nanowire biosensors for detection of cardiac troponin I (cTnI) with high sensitivity, BIOSENSORS & BIOELECTRONICS, , 77, 695-701 (2015)
  • Effects of single grain boundary and random interface traps on electrical variations of sub-30nm polysilicon nanowire structures, MICROELECTRONIC ENGINEERING, , 149, 113- (2015)
  • Junction Design Strategy for Si Bulk FinFETs for System-on-Chip Applications Down to the 7-nm Node, IEEE ELECTRON DEVICE LETTERS, , 36, 994-996 (2015)
  • Three-dimensional simulation of threshold voltage variations due to an oblique single grain boundary in sub-40nm polysilicon nanowire FETs, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, , 30, - (2015)
  • Investigation of RC Parasitics Considering Middle-of-the-Line in Si-Bulk FinFETs for Sub-14-nm Node Logic Applications, IEEE TRANSACTIONS ON ELECTRON DEVICES, , 62, 3441-3444 (2015)
  • Impact of the spacer dielectric constant on parasitic RC and design guidelines to optimize DC/AC performance in 10-nm-node Si-nanowire FETs, JAPANESE JOURNAL OF APPLIED PHYSICS, , 54, 4DN08-1-4DN08-5 (2015)
  • Physical DC and thermal noise models of 18nm double-gate junctionless p-type MOSFETs for low noise RF applications, JAPANESE JOURNAL OF APPLIED PHYSICS, , 54, 4DC08-1-4DC08-6 (2015)
  • Extraction of source/drain resistivity parameters optimized for double-gate FinFETs, JAPANESE JOURNAL OF APPLIED PHYSICS, , 54, - (2015)
  • Ga-doped indium oxide nanowire phase change random access memory cells, Nanotechnology, , 25, 55205-1-55205-7 (2014)
  • Silicon Nanowire Biologically Sensitive Field Effect Transistors: Electrical Characteristics and Applications, Journal of Nanoscience and Nanotechnology, , 14, 273-287 (2014)
  • Investigation of thermal resistance and power consumption in Ga-doped indium oxide (In2O3) nanowire phase change random access memory, Applied Physics Letters, , 104, - (2014)
  • Synthesis and Characterization of carbon nanowalls on Different Substrates by Radio Frequency Plasma Enhanced Chemical Vapor Deposition, Carbon, , 72, 372-380 (2014)
  • Finite Amplitude Effects on Landau Damping and Diminished Transportation of Trapped Electrons, JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, , 83, 74502-1-74502-10 (2014)
  • In Situ Observation of Melting Behavior of ZnTe Nanowires, The Journal of Physical Chemistry, , 118, 15061-15067 (2014)
  • Investigation of Low-Frequency Noise in p-type Nanowire FETs: Effect of Switched Biasing Condition and Embedded SiGe Layer, IEEE ELECTRON DEVICE LETTERS, , 35, 702-704 (2014)
  • Annealing effect on the thermal conductivity of thermoelectric ZnTe nanowires, Materials Letters, , 135, 87-91 (2014)
  • Threshold voltage variations due to oblique single grain boundary in sub-50-nm polysilicon channel, IEEE TRANSACTIONS ON ELECTRON DEVICES, , 61, 2705-2710 (2014)
  • Single-crystalline CdTe nanowire field effect transisitor as a nanowire-based photodetector, Physical Chemistry Chemical Physics, , 16, 22687-22693 (2014)
  • Thermally Phase-Transformed In2Se3 Nanowires for Highly Sensitive Photodetectors, SMALL, , 10, 3795-3802 (2014)
  • Suspended Honeycomb Nanowire ISFETs for Improved Stiction-Free Performance, NANOTECHNOLOGY, , 25, 345501- (2014)
  • Role of an encapsulating layer for reducing resistance drift in phase change random access memory, AIP ADVANCES, , 4, 127155- (2014)
  • Improved performance of In2Se3 nanowire phase-change memory with SiO2 passivation, Solid-State Electronics, , 80, 10-13 (2013)
  • Bandgap engineering of CdxZn1-xTe nanowires, Nanoscale, , 5, 932-935 (2013)
  • Analytic model of S/D series resistance in trigate finfets with polygonal epitaxy, IEEE TRANSACTONS ON ELECTRON DEVICES, , 60, 1302-1309 (2013)
  • Investigation of the electrical stability of Si-nanowire biologically sensitive field-effect transistors with embedded Ag/AgCl pseudo reference electrode, RSC Advances, , 3, 7963-7969 (2013)
  • Thermally efficient and highly scalable In2Se3 nanowire phase change memory, Journal of Applied Physics, , 113, 164303-1-164303-6 (2013)
  • Simultaneous Formation of Ohmic Contacts on p (+)- and n (+)-4H-SiC Using a Ti/Ni Bilayer, Journal of Electronic Materials, , 42, 2897-2904 (2013)
  • Thermal Conductivity of ZnTe Nanowires, Journal of Applied Physics, , 114, 134314-1-134314-7 (2013)
  • Investigation of electromigration in In2Se3 nanowire for phase change memory devices, Applied Physics Letters, , 103, 233504-1-233504-4 (2013)
  • Simple S/D Series Resistance Extraction Method Optimized for Nanowire FETs, IEEE Electron Device Letters, , 34, 828-830 (2013)
  • Reliability study of methods to suppress boron transient enhanced diffusion in high-k/metal gate Si/SiGe channel pMOSFETs, Microelectronic engineering, , 112, 80-83 (2013)
  • Improved Degradation and Recovery Characteristics of SiGe p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors under Negative-Bias Temperature Stress, Japanese Journal of Applied Physics, , 52, 4CC21-1-4CC21-4 (2013)
  • Improved Electrical Characteristics of Honeycomb Nanowire ISFETs, IEEE Electron Devices Letters, , 34, 1059-1061 (2013)
  • Thermal breakdown of ZnTe nanowires, CHEMPHYSCHEM, , 13, 347-352 (2012)
  • Electrical characteristics of 20-nm junctionless Si nanowire transistors, Solid State Electronics, , 73, 7-10 (2012)
  • Electron states in a silicon nanowire in the presence of surface potential and field, Nanotechnology, , 23, 415201-1-415201-15 (2012)
  • Post-growth modification of electrical properties of ZnTe nanowires, CHEMICAL PHYSICS LETTERS, , 543, 117-120 (2012)
  • Device Design Guidelines for Nanoscale FinFETs in RF/Analog Applications, IEEE ELECTRON DEVICE LETTERS, , 33, 1234-1236 (2012)
  • Investigation of low-frequency noise behavior after hot-carrier stress in an n-channel junctionless nanowire MOSFET, IEEE ELECTRON DEVICE LETTERS, , 33, 1538-1540 (2012)
  • Characterization of Channel-Diameter-Dependent Low-Frequency Noise in Silicon Nanowire Field-Effect Transistors, IEEE ELECTRON DEVICE LETTERS, , 33, 1348-1350 (2012)
  • ENABLING COMMUNICATION AND COOPERATION IN BIO-NANOSENSOR NETWORKS: TOWARD INNOVATIVE HEALTHCARE SOLUTIONS, IEEE WIRELESS COMMUNICATIONS, , 19, 42-51 (2012)
  • Process optimization for synthesis of high-quality graphene films by low-pressure chemical vapor deposition, Japanese Journal of Applied Physics, , 51, 6FD21-1-6FD21-4 (2012)
  • C-V Characteristics in Undoped Gate-All-Around Nanowire FET Array, IEEE Electron Device Letters, , 32, 116-118 (2011)
  • Synthesis of ZnTe nanostructures by vapor-liquid-solid technique, CHEMICAL PHYSICS LETTERS, , 504, 62-66 (2011)
  • Analysis of Abnormal Upturns in Capacitance-Voltage Characteristics for MOS Devices With High-k Dielectrics, IEEE ELECTRON DEVICE LETTERS, , 32, 434-436 (2011)
  • Characterization and Modeling of 1/f Noise in Si-nanowire FETs: Effects of Cylindrical Geometry and Different Processing of Oxides, IEEE TRANSACTIONS ON NANOTECHNOLOGY, , 10, 417-423 (2011)
  • Silicon nanowire ion sensitive field effect transistor with integrated Ag/AgCl electrode: pH sensing and noise characteristics, ANALYST, , 136, 5012-5016 (2011)
  • Comprehensive Study of Quasi-Ballistic Transport in High-kappa/Metal Gate nMOSFETs, IEEE ELECTRON DEVICES LETTERS, , 32, 1474-1476 (2011)
  • Interfacial-layer-driven dielectric degradation and breakdown of HfSiON/SiON gate dielectric nMOSFETs, IEEE ELECTRON DEVICE LETTERS, , 32, 1319-1321 (2011)
  • In situ Observation of Morphological Change in CdTe Nano- and Submicron Wires, NANOTECHNOLOGY, , 22, 435204-1-435204-6 (2011)
  • New Investigation of Hot-Carrier Degradation on RF Small-Signal Parameter and Performance in High-k/Metal-Gate nMOSFETs, IEEE ELECTRON DEVICES LETTERS, , 32, 1668-1670 (2011)
  • A computational and experimental investigation of the mechanical properties of single ZnTe nanowires, NANOSCALE, , 4, 897-903 (2011)
  • Thermal breakdown of ZnTe nanowires, CHEMPHYSCHEM, , 13, 347-352 (2011)
  • A sub-micron metallic electrothermal gripper, MICROSYSTEM TECHNOLOGIES-MICRO-AND NANOSYSTEMS-INFORMATION STORAGE AND PROCESSING SYSTEMS, , 16, 367-373 (2010)
  • Electrical and gas sensing properties of ZnO nanorod arrays directly grown on a four-probe electrode system, ELECTROCHEMISTRY COMMUNICATIONS, , 12, 475-478 (2010)
  • Characteristics of the Series Resistance Extracted From Si Nanowire FETs Using the Y-Function Technique, IEEE TRANSACTIONS ON NANOTECHNOLOGY, , 9, 212-217 (2010)
  • Comparison of Series Resistance and Mobility Degradation Extracted from n- and p-Type Si-Nanowire Field Effect Transistors Using the Y-Function Technique, JAPANESE JOURNAL OF APPLIED PHYSICS, , 49, 4DN06-01-4DN06-05 (2010)
  • The quiet revolution of inorganic nanowires: fabrication techniques and potential applications, IEEE NANOTECHNOLOGY MAGAZINE, , 4, 5-9 (2010)
  • Nanoscale Memory Devices, NANOTECHNOLOGY, , 21, 412001-1-412001-22 (2010)
  • The Effect of a Si Capping Layer on RF Characteristics of High-k/Metal Gate SiGe Channel pMOSFETs, IEEE ELECTRON DEVICE LETTERS, , 31, 1104-1106 (2010)
  • Single ZnO Nanowire Based High-Performance Field Effect Transistors (FETs), JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, , 9, 5839-5844 (2009)
  • Forming carbon nanotube composites by directly coating forests with inorganic materials using low pressure chemical vapor deposition, THIN SOLID FILMS, , 517, 525-530 (2008)
  • The effect of plasma anodization on AlGaN/GaN HEMT, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, , 51, S258-S261 (2007)
  • Gas-phase and sample characterizations of multiwall carbon nanotube growth using an atmospheric pressure plasma, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, , 24, 1812-1817 (2006)
  • Carbon nanotubes-based methanol sensor for fuel cell application, JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, , 6, 3608-3613 (2006)
  • Chemical synthesis of PEDOT nanotubes, MACROMOLECULES, , 39, 470-472 (2006)
  • Effects of oxygen plasma on optical and electrical characteristics of multiwall carbon nanotubes grown on a four-probe patterned Fe layer, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, , 23, 1013-1017 (2005)
  • Sub-micron metallic electrothermal actuators, JOURNAL OF MICROMECHANICS AND MICROENGINEERING, , 15, 322-327 (2005)

국내전문학술지

  • 고성능 TFT 소자 응용을 위한 폴리스티렌 나노입자를이용한 나노 그물망 제작공정 개발, 반도체디스플레이기술학회지, , 17, 36-40 (2018)
  • Nanowires in Thermoelectric Devices, TRANSACTIONS ON ELECTRICAL AND ELECTRONIC MATERIALS, , 12, 227-233 (2011)

일반학술지

  • In-Situ TEM Monitoring of Thermal Decomposition in CdTe and ZnTe Nanowires, Microscopy and Microanalysis, , 17, 1874-1875 (2011)

학술회의논문

  • Vth variation of string SONOS NAND Flash depending on single grain boundary and stored electron charges in an adjacent cell, Extended Abstracts of the 2017 International Conference on Solid State Devices and Materials, 0, 0, 793-794 (2017)
  • Improving DMMP(Salin simulant) Sensing Characteristics of TFQ Functionalized Graphene Chemiresistive Sensors, Proceedings of the 17th IEEE International Conference on Nanotechnology, 0, 0, 675-677 (2017)
  • Improving DMMP (Salin simulant) Sensing Characteristics of TFQ Functionalized Graphene Chemiresistive Sensors, Proceedings of the 17th IEEE international Conference on Nanotechnology, 0, 0, 675-677 (2017)
  • Extraction of Source / Drain Series Resistance Components Optimized for Double-gate FinFETs, INTERNATIONAL CONFERENCE ON SOLID STATE DEVICES AND MATERIALS, 0, 0, - (2014)
  • Impact of High-k Spacers on Parasitic Effects Considering DC/AC Performance Optimization in Si-Nanowire FETs for sub 10nm Technology Node, INTERNATIONAL CONFERENCE ON SOLID STATE DEVICES AND MATERIALS, 0, 0, - (2014)
  • Physical DC and Thermal Noise Models of 18 nm DG Junctionless pMOSFETs, INTERNATIONAL CONFERENCE ON SOLID STATE DEVICES AND MATERIALS, 0, 0, - (2014)
  • Size-dependent Characteristics of Highly-scalable In2Se3 Nanowire Phase-change Random Access Memory, THE 13TH IEEE INTERNATIONAL CONFERENCE ON NANOTECHNOLOGY, 0, 0, - (2013)
  • Extraction of Series Resistance on Junctionless and Inversion-mode nanowire FET through the Method based on Y-function, 71ST ANNUAL DEVICE RESEARCH CONFERENCE, 0, 0, - (2013)
  • Characterization of Low Frequency Noise in Nanowire FETs Considering Variability and Quantum Effects, 71ST ANNUAL DEVICE RESEARCH CONFERENCE, 0, 0, - (2013)
  • Simultaneous formation of ohmic contacts on p- and n-type 4H-SiC using Ti/Ni double layer system, MATERIALS RESEARCH SOCIETY SPRING MEETING, 0, 0, - (2013)
  • A 600V trench gate MOSFET with charge sheet super junction(CSSJ), 한국반도체학술대회논문집, 0, 0, - (2012)
  • Process optimization for synthesis of high-quality graphene films by low pressue chemical vapor deposition, PROCESS OPTIMIZATION FOR SYNTHESIS OF HIGH-QUALITY GRAPHENE FILMS BY LOW PRESSUE CHEMICAL VAPOR DEPOSITION, 0, 0, - (2011)
  • Reliable Extraction of Series Resistance in Silicon Nanowire FETs Using Y-function Technique, 2011 IEEE NANOTECHNOLOGY MATERIALS AND DEVICES CONFERENCE, 0, 0, - (2011)
  • Analysis of Bottom Channel Effect in Silicon Nanowire FET based on Bulk-Silicon, 2011 INTERNATIONAL CONFERENCE ON SOLID STATE AND DEVICE MATERIALS, 0, 0, - (2011)
  • Hot carrier Effect on RF Chracteristics of High-k Metal Gate SiGe Channel pMOSFETs, 2011 INTERNATIONAL CONFERENCE ON SOLID STATE S AND MATERIALS, 0, 0, - (2011)
  • U-Health Smart Home, NANOTECHNOLOGY MAGAZINE, 0, 0, - (2011)
  • Analysis of Parasitic Bottom Capacitance, 2011 11TH IEEE INTERNATIONAL CONFERENCE ON NANOTECHNOLOGY, 0, 0, - (2011)
  • In-Situ TEM Monitoring of Thermal Decomposition in CdTe and ZnTe Nanowires, MICROSCOPY AND MICROANALYSIS 2011, 0, 0, - (2011)
  • Comparative study of fabricated junctionless and inversion-mode nanowire FETs, PROCEEDINGS OF DRC, 0, 0, - (2011)
  • Low-frequency noise behavior of La-doped Hf/SiON/metal gate nMOSFETs, PROCEEDINGS OF 2011 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, 0, 0, - (2011)
  • pH Sensing and Noise Characteristics of Si Nanowire Ion-Sensitive Field Effect Transistors, IEEE-NEMS, 0, 0, - (2011)
  • 실리콘 나노선을 이용한 Ion-Sensitive Field Effect Transistor의 제작 및 전기적 특성 분석, 한국반도체학술대회, 0, 0, 651-652 (2011)
  • In2Se3 나노선 합성 및 이를 이용한 상변화 메모리소자의 전기적 특성 분석, 한국반도체학술대회, 0, 0, 895-896 (2011)
  • Photonic Quantum Ring from Quantum Corral of Whispering Cave Mode, 광자기술학술회의, 0, 0, - (2010)
  • Reliability properties in sub-50 nm high performance high-k.metal gate stacks SiGe pMOSFETs, IEEE NANOTECHNOLOGY MATERIALS AND DEVICES CONFERENCE, 0, 0, - (2010)
  • C-V Characteristics and Analysis of Undoped Gate-All-Around Nanowire FET Array, PROCEEDINGS OF 2010 INTERNATIONAL CONFERENCE ON SOLID STATE DEVICES AND MATERIALS, 0, 0, - (2010)
  • Characterization of Gate-All-Around Si-NWFET, including Rsd, Cylindrical Coordinate Based 1/f Noise and Hot Carrier Effects, PROCEEDINGS OF 2010 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, 0, 0, - (2010)
  • Impact of Dipole-induced Dielectric Relaxation on High-frequency Performance in La-incorporated HfSiON/Metal Gate, PROCEEDINGS OF IEDM 2009, 0, 0, 127-130 (2009)
  • Series Resistance Behavior Extracted from Silicon Nanowire Reansistors Using the Y-function Technique, ., 0, 0, - (2009)
  • Effects of Extension Profile Engineering to Suppress Boron TED on the Reliability of High-k/Metal Gate SiGe pMOSFETS, IEEE INTERNATIONAL SYMPOSIUM ON ADVANCED GATE STACK TECHNOLOGY, 0, 0, - (2009)
  • FinFET Process Refinement for Improved Mobility and Gate Work Function Engineering, IEEE IEDM Technical Digest, 0, 0, 259-262 (2002)

학회발표

  • Process developing of Nanonet structure using polystyrene nanoparticles for high-performance LTPS TFT application , 한국반도체학술대회, 0, 0, - (2019)
  • Sensing responses of Au-decorated silicon nanowire sensor for ammonia detection, 한국반도체학술대회, 0, 0, - (2019)
  • The Effect of Carbon Pre-Silicidation Implant (C-PSI) on the Thermal Stability and the Contact Resistivity of Titanium Silicide (TiSi), 한국반도체학술대회, 0, 0, - (2019)
  • Parylene-H 박막을 절연막으로 이용한 실리콘 바이오센서의 DC 특성 및 신뢰성 분석, 반도체공학회, 0, 0, - (2018)
  • An Analysis on Electrical Characteristics of Submicron-LTPS Thin-Film-Transistors, 한국반도체디스플레이기술학회, 0, 0, - (2018)
  • Effect of Elliptical Channel Shape on Memory Characteristics of Vertical 3D NAND Flash Memory, 한국반도체디스플레이기술학회, 0, 0, - (2018)
  • Development of nano-network formation using nanosphere particle, 한국반도체디스플레이기술학회, 0, 0, - (2018)
  • 1/f Noise Analysis of Network-channel LTPS TFT, 한국반도체디스플레이학술대회, 0, 0, - (2018)
  • Chopper stabilization method 를 이용한 Field Effect Transistor-Electret membrane MEMS Microphone 의 신호 대 잡음 비 향상 기법에 대한 연구, 제20회 한국 MEMS 학술대회 논문집, 0, 0, - (2018)
  • Low Frequency Noise in SiC Double-Implant MOSFETs, 제25회 한국반도체학술대회, 0, 0, - (2018)
  • Electrical Characteristics of Parylene Gate Dielectric in Silicon Nanowire Based Ion-Sensitive Field-Effect Transistors, 제25회 한국반도체학술대회, 0, 0, - (2018)
  • Improved Thermal Stability and Lower Sheet Resistance of NiSi with Carbon Pre-silicidation Implant, 제25회 한국반도체학술대회, 0, 0, - (2018)
  • Fabrication and Characterization of Sub-micron LTPS TFT with Various Width and Length, Nano Korea 2017 Symposium, 0, 0, - (2017)
  • Enhanced Gas Sensing Performances of Nove Si-Nanonet-Channel Resistive Sensor, Nano Korea 2017 Symposium, 0, 0, - (2017)
  • Effect of Buffer Concentration on Sensing Characteristics of Silicon-Nanowire BioFETs, 한국반도체디스플레이기술학회 2017년 춘계학술대회, 0, 0, - (2017)
  • Novel Network-channel LTPS TFT with Outstanding Electrical Characteristics, 한국반도체디스플레이기술학회 2017년 춘계학술대회, 0, 0, - (2017)
  • Mitigation of Grain Boundary Effect in 3D Vertical NAND Flash with Macaroni Structure, 제24회 한국반도체학술대회, 0, 0, - (2017)
  • Investigation of Threshold Voltage Variation under Negative-Bias Stress Condition of SiC Double-Implanted MOSFETs, 제24회 한국반도체학술대회, 0, 0, - (2017)
  • Comparison of gate workfunction variability and random discrete dopant on analog figure-of-merits of inversion-mode and junctionless nanowire transistors, 제24회 한국반도체학술대회, 0, 0, - (2017)
  • Void-free bottom-up electroplating for fabrication of through-silicon via, ., 0, 0, - (2016)
  • Effect of surface functional groups on the pH sensitivity in ion-sensitive field effect transistors, ., 0, 0, - (2016)
  • Effects of Work-function Variation on Analog Figures-of-merits of Inversion-mode and Junctionless Nanowire Transistors, ., 0, 0, - (2016)
  • Highly Sensitive BioFETs with 3-Dimensional Nanonet Channel for Biosensing Applications, ., 0, 0, - (2016)
  • Fabrication and Characterization of, ., 0, 0, - (2016)
  • Investigation of 1/f Noise Characteristics in Junctionless Poly-Si Thin-Film Transistors under Hot Carrier Injection, ., 0, 0, - (2016)
  • Investigation of oxide traps at SiC/SiO2 interfacial layer in SiC DMOSFET for high-power applications, ., 0, 0, - (2016)
  • High performances BioFETs with 3-dimensional nanostructures for biosensing applications, ., 0, 0, - (2016)
  • Transfer Characteristics of Vacuum Channel FETs with Tip Positions of Emitter and Collector, ., 0, 0, - (2016)
  • Fabrication and Bias-Temperature Instability of Vertical Low-Temperature Poly-Si Thin-Film Transistor, ., 0, 0, - (2016)
  • Investigation of stress-induced instability of SiC DMOSFETs, ., 0, 0, - (2016)
  • Reliability Characteristics in Junctionless Poly-Si Thin-Film Transistors, ., 0, 0, - (2016)
  • A Threshold Voltage Variation Calibration Algorithm for An ISFET-Based Low-Cost pH Sensor System, ., 0, 0, - (2015)
  • Effects of Buffer Concentration on Sensing Performances of Ion-Sensitive Field-Effect Transistors with Si-Nanowires, ., 0, 0, - (2015)
  • Electrical Variation of Vertical Macaroni NAND Cells due to Random Grain Boundary Using Voronoi Method, ., 0, 0, - (2015)
  • The Electrical Variations due to Grain Boundary using Voronoi Method in Tunneling Field-Effect-Transistor (TFET) of Polysilicon Nanowire Channel, ., 0, 0, - (2015)
  • Various Heterojunction Single Gate Tunneling FETs with Graded Channel Doping in Sub- 40 nm Channels, ., 0, 0, - (2015)
  • The Statistical Distribution of Electrical Characteristics with Random Grain Boundary in Vertical NAND Unit Cells, ., 0, 0, - (2015)
  • Electrical Characteristics of Graphene Field Effect Transistors on Stainless Steel (STS) Substrate, ., 0, 0, - (2015)
  • The Temperature Dependence of Threshold Voltage Variations due to Oblique Single Grain Boundary in 3D NAN D Unit Cells, ., 0, 0, - (2014)
  • Electrical and pH Sensing Characteristics of Si Nanowire-Based Suspended FET Biosensors, ., 0, 0, - (2014)
  • Noise Consideration for Cancer Marker Detection using Nanowire Sensors, ., 0, 0, - (2014)
  • Novel biosensor platform based on Si-nanowire-Network Structures, IEEE INEC2014, 0, 0, - (2014)
  • The Variability due to Random Discrete Dopant and Grain Boundary in 3D NAND Unit Cell, IEEE INEC2014, 0, 0, - (2014)
  • Analysis of atomic migration in In2Se3 nanowire for phase change memory applications, ., 0, 0, - (2014)
  • Improved phase transition performance of Ga-doped indium oxide nanowire phase change random access memory with encapsulating layer, ., 0, 0, - (2014)
  • Blue Nano-Flower Photonic Quantum Ring Laser, ., 0, 0, - (2014)
  • Effects of Grain Boundary Traps on Electrical Variation in 3D Vertical NAND Flash Memory Cell with Macaroni Channel Structure, ., 0, 0, - (2014)
  • An experimental verification of a scaled RC-dominant interconnect line model for High-speed wireline, ., 0, 0, - (2014)
  • 3D Simulation of Threshold Voltage Variations Due to Random Grain Boundary and Discrete Dopants in Sub-20 nm Gate-All-Around Poly-Si Transistors, ., 0, 0, - (2014)
  • Analysis of pseudo reference electrode in silicon nanowire ISFETs for hydrogen ion detection, ., 0, 0, - (2013)
  • Silicon Nanowire Bio-Field Effect Transistor with Embedded Ag/AgCl Pseudo Reference Electrode, ., 0, 0, - (2013)
  • Diameter-related Characteristics of In2Se3 Nanowire Based Phase Change Memory, ., 0, 0, - (2013)
  • Graphene Field Effect Transistor with High-k Gate Dielectric on Flexible Stainless Steel (STS) Substrate, 5TH INTERNATIONAL SYMPOSIUM ON IT CONVERGENCE ENGINEERING, 0, 0, - (2013)
  • Silicidation for Forming Low Contact Resistance of Ohmic Contact on 4H-SiC using Ni and Ti/Ni Layer, 5TH INTERNATIONAL SYMPOSIUM ON IT CONVERGENCE ENGINEERING, 0, 0, - (2013)
  • Fabrication and Characterization of Blue Nano Photonic Quantum Ring Laser, ., 0, 0, - (2013)
  • Simulation Study of Random Discrete Dopants and Grain Boundary in Polysilicon Channel FETs, 5TH INTERNATIONAL SYMPOSIUM ON IT CONVERGENCE ENGINEERING, 0, 0, - (2013)
  • Growth of SiGe Epitaxial Layer Using UHV-CVD for Multi-Stacked Suspended Nanostructures, 5TH INTERNATIONAL SYMPOSIUM ON IT CONVERGENCE ENGINEERING, 0, 0, - (2013)
  • Ti/Ni 이중막을 이용한 p형 및 n형 SiC ohmic contact의 동시 형성, ., 0, 0, - (2013)
  • Improved performance of In2Se3 nanowire device with thermal boundary resistance (TBR) for phase change memory application, ., 0, 0, - (2013)
  • Nanowire Ion-Sensitive Field Effect Transistor for Uric acid Detection, ., 0, 0, - (2013)
  • UHV-CVD를 이용한 SiGe 에피 성장 및 Multi-Stacked 구조의 Suspended 나노선 응용, ., 0, 0, - (2013)
  • Modeling and Analysis of the Parasitic Series Resistance in Raised Source/Drain FinFETs with Polygonal Epitaxy, ., 0, 0, - (2012)
  • Investigation on hot carrier effects in n-type short-channel junctionless nanowire transistors, 12TH INTERNATIONAL CONFERENCE ON NANOTECHNOLOGY, 0, 0, - (2012)
  • Enhancement of electrical properties of ZnTe nanowires, ., 0, 0, - (2012)
  • Band gap modulation in VLS-grown CdxZn1-xTe alloy nanowires, ., 0, 0, - (2012)
  • Effective Parameters on Growth Conditions of CdTe Nanowires Synthesized by Vapor-liquid-Solid Method, ., 0, 0, - (2012)
  • Uric acid detection using Si-nanowire Ion-Sensitive Field Effect Transistors, ., 0, 0, - (2012)
  • Intrinsic Reliability Improvement of SiGe Quantum Well pMOSFETs, INTERNATIONAL CONFERENCE ON SUPERLATTICES, NANOSTRUCTURES, AND NANODEVICES, 0, 0, - (2012)
  • Determination of Operation Region in Silicon-Nanowire BioFETs to Maximize Signal-to-Noise Ratio, INTERNATIONAL CONFERENCE ON SUPERLATTICES, NANOSTRUCTURES, AND NANODEVICES, 0, 0, - (2012)
  • Dielectric Degradation and Breakdown of High-k/Metal Gate Stack nMOSFETs, ., 0, 0, - (2012)
  • Si nanowire ion-sensitive field efect transistor(ISFET) for biosensor application, ., 0, 0, - (2012)
  • Comparative Study of Geometry-dependent Capacitances of Planar FETs and Double-Gate FinFETs: Optimization and Process Variation, ., 0, 0, - (2012)
  • Sensing and Noise Characteristics of Si-Nanowire Ion-Sensitive-Field-Effect-Transistors for Future Biosensor Applications, ., 0, 0, - (2012)
  • 비종단구조 Si-VDMOSFET 소자의 전기적 특성, ., 0, 0, - (2011)
  • Nanoscale Silicon Ion-Sensiive Field-Effect Transistor for pH Sensor and Biosensor Applications, ., 0, 0, - (2011)
  • Highly Sensitive BioFETs with Various Nanowire Structure, ., 0, 0, - (2011)
  • Development of biologically active Si nanowire field effect transistors (biofets) for detecting carcinoembryonic antigens(CEA), ., 0, 0, - (2011)
  • ZnTe Nanowires fabrication and characterizatin of theri thermoelectric properties, ., 0, 0, - (2011)
  • synthesis and electrical characteristics of In2Se3 nanowires for phase change memory applications, ., 0, 0, - (2011)
  • Positioning Nanostructures via DNA Origami Templates on a MEMS Device for Thermoelectric Characterization, ., 0, 0, - (2011)

단행본

  • Nanowire Field Effect Transistors: Principles and Applications, Springer, , (2013)
  • Nanowire Field Effect Transistors: Principles and Applications, Springer, , (2013)
  • Nanowire Field Effect Transistors: Principles and Applications, Springer, , (2013)
  • Nanowire Field Effect Transistors: Principles and Applications, Springer, , (2013)
  • Characterization of Gate-All-around Si-Nanowire Field-Effect Transistor: extraction of series resistance and capacitance-voltage behavior, CRC PRESS, , (2013)
  • Plasma Processing of Nanomaterials, CRC Press, , (2011)
  • Trends in nano- and micro-cavities, Bentham Science Publishers Ltd., , (2010)
  • 놀라운 세계 카본나노튜브, ITCE/NCNT, , 이정수 (2009)

연구실적

  • 3D APT(ATOM-PROBE TOMOGRAPHY)를 이용한 HIGH-K 절연막 특성분석, 포항공과대학교 (2008-2009)
  • 3D APT(ATOM-PROBE TOMOGRAPHY)를 이용한 HIGH-K 절연막 특성분석, 포항공과대학교 (2009-2010)
  • (학생)인건비풀링과제, 포항공대산학협력단 (2009-2020)
  • 3D APT를 연계한 나노 반도체소자의 전기적 구조적 특성분석, 삼성전자(주) (2010-2011)
  • LED 조명용 고효율 파워 소자 개발, 포항공대산학협력단 (2010-2011)
  • 인건비풀링과제, 포항공과대학교 (2011-2015)
  • 연구개발과제, 포항공과대학교 (2006-2016)
  • VERTICAL 구조의 FLASH MEMORY 특성 분석 및 모델링, 삼성전자(주) (2011-2012)
  • 고효율 인버터시스템을 위한 저손실 SIC 스위칭소자 개발, 한국전기연구원 (2011-2012)
  • VERTICAL 구조의 FLASH MEMORY 특성 분석 및 모델링, 삼성전자(주) (2012-2013)
  • 고효율 인버터시스템을 위한 저손실 SIC 스위칭소자 개발, 한국전기연구원 (2012-2013)
  • VERTICAL LOW TEMPERATURE POLY-SI TFT 개발, 삼성디스플레이(주) (2014-2015)
  • 생화학 단분자 탐지 가능한 초민감도 3차원 나노그물 FET 센서 연구, 국방과학연구소 (2014-2016)
  • 그래핀 기반 RF 아날로그 믹서 개발, 한국과학기술원 (2014-2015)
  • VERTICAL LOW TEMPERATURE POLY-SI TFT 개발, 삼성디스플레이(주) (2015-2016)
  • 연구개발과제[2015년 신설], 포항공과대학교 (2015-2034)
  • VERTICAL 3D NAND FLASH의 RELIABILITY 특성 연구, 에스케이하이닉스 주식회사 (2015-2017)
  • 기술료 연구개발재투자과제, 포항공대산학협력단 (2015-2016)
  • 실리콘 기반 현장진단형 바이오센서 플랫폼개발, (주)아이엠헬스케어 (2016-2016)
  • 반도체 센서 기반 인플루엔자 현장현시(POCT) 진단키트 개발, (주)아이엠헬스케어 (2016-2017)
  • (정부)5NM급 이하 차세대 LOGIC 소자 원천요소기술 개발, 산업자원부 (2016-2016)
  • (민간)5NM급 이하 차세대 LOGIC 소자 원천요소기술 개발, (사)한국반도체연구조합 (2016-2016)
  • [전자]지식재산출원등록비 연구자별 과제, 포항공대산학협력단 (2017-2029)
  • VERTICAL 3D NAND FLASH의 RELIABILITY 특성 연구, 에스케이하이닉스 주식회사 (2017-2019)
  • 인플루엔자 진단용 나노그물 FET 바이오센서 상용, (주)아이엠헬스케어 (2017-2018)
  • R_간접비_전자전기공학과, 포항공과대학교 (2020-2023)
  • R_직접비_10130335_RND MAGNETRON SPUTTERING SYSTEM, 포항공과대학교 (2018-2023)
  • (정부)5 NM 급 이하 차세대 LOGIC 소자 원천요소기술개발, 한국산업기술평가관리원 (2018-2018)
  • (민간)5 NM 급 이하 차세대 LOGIC 소자 원천요소기술개발, (사)한국반도체연구조합 (2018-2018)
  • 뇌심혈관계 진단용 PQR 레이처 칩 개발 및 광특성평가연구, 와이에이치케이 주식회사 (2018-2019)
  • 인플루엔자 진단용 나노그물 FET 바이오센서 상용화, (주)아이엠헬스케어 (2018-2019)
  • (정부)5 NM 급 이하 차세대 LOGIC 소자 원천요소기술개발, 한국산업기술평가관리원 (2019-2019)
  • (민간)5 NM 급 이하 차세대 LOGIC 소자 원천요소기술개발, (사)한국반도체연구조합 (2019-2019)
  • VERTICAL 3D NAND FLASH의 RELIABILITY 특성 연구 , 에스케이하이닉스 주식회사 (2019-2021)
  • (신규)학생인건비통합관리계정(전자), 포항공대산학협력단 (2019-2040)
  • (정부)5 NM 급 이하 차세대 LOGIC 소자 원천요소기술개발, 한국산업기술평가관리원 (2020-2020)
  • (민간)5 NM 급 이하 차세대 LOGIC 소자 원천요소기술개발, (사)한국반도체연구조합 (2020-2020)
  • 아프리카돼지열병 신속진단을 위한 반도체센서 기반 POCT 시스템 개발, 농림식품기술기획평가원 (2020-2020)
  • 아프리카돼지열병 신속진단을 위한 반도체센서 기반 POCT 시스템 개발, 농림식품기술기획평가원 (2021-2021)
  • 4단계 BK21사업 2차년도 지능형 정보융합 미래인재 교육연구단(국고), 재단법인한국연구재단 (2021-2022)
  • (정부)5 NM 급 이하 차세대 LOGIC 소자 원천요소기술개발, 한국산업기술평가관리원 (2021-2021)
  • (민간)5 NM 급 이하 차세대 LOGIC 소자 원천요소기술개발, (사)한국반도체연구조합 (2021-2021)
  • 전자_부서자체연구개발비[2021년 신설], 포항공과대학교 (2021-2040)
  • 4단계 BK21사업 2차년도 국고이자(전자), 재단법인한국연구재단 (2021-2022)
  • [OPEN-LAB]2021년도 4분기 RIST 선도과제-선도연구 2, (재)포항산업과학연구원 (2021-2022)
  • 4단계 BK21사업 3차년도 지능형 정보융합 미래인재 교육연구단(국고), 재단법인한국연구재단 (2022-2023)
  • 4.0021510/4.0022323_이월과제(2차년도 국고지원금), 재단법인한국연구재단 (2022-2023)

IP

  • 이정수,최원영,신성환,김동훈, 바이오센서 및 이의 제조 방법, -, PCT/KR2022/0046 (2022)
  • 이정수,JinBo,신성환,박지원,김동훈,최원영, 표적물질 검출 센서 제조방법, -, PCT/KR2021/0108 (2021)
  • 이정수,김동훈,최원영,신성환, 바이오센서 및 바이오센서 제조 방법, 한국, 10-2021-0089659 (2021)
  • 이정수,최원영,신성환,김동훈, 바이오센서 및 이의 제조 방법, 한국, 10-2021-0162374 (2021)
  • 이정수,김동훈,최원영,신성환, 바이오 센서 및 그 제조방법, 한국, 10-2021-0056032 (2021)
  • 이정수,JinBo,김동훈,최원영,신성환,박지원, 표적물질 검출 센서 제조방법, 한국, 10-2020-0111123 (2020)
  • 이정수,JinBo,박찬오,김동훈,최원영, 미세유체 채널이 형성된 멤브레인을 이용한 FET 기반 다중 바이오센서 및 이를 이용한 검출 방법, 한국, 10-2017-0172247 (2017)
  • JinBo,박찬오,김동훈,최원영,이정수, 미세유체 채널이 형성된 멤브레인을 이용한 FET 기반 다중 바이오센서 및 이를 이용한 검출 방법, 한국, 10-2017-0172247 (2017)
  • 이정수,김동훈,김기현,박찬오, 그물망 구조의 나노선을 구비한 나노선 전계효과 센서 및 그 제조방법, USA, 15/467,017 (2017)
  • 이정수,김동훈,김기현,박찬오, 그물망 구조의 나노선을 구비한 나노선 전계효과 센서 및 그 제조방법, USA, 15/467,017 (2017)
  • 이정수,박찬오,김동훈,JinBo, 나노부유구조의 다중센서 및 그 제조방법, 한국, 10-2016-0103785 (2016)
  • 이정수,박찬오,김동훈,JinBo, 나노부유구조의 다중센서 및 그 제조방법, 한국, 10-2016-0103785 (2016)
  • 이정수,김동훈,김기현,박찬오, 그물망 구조의 나노선을 구비한 나노선 전계효과 센서 및 그 제조방법, USA, 15/053,109 (2016)
  • 이정수,김동훈,김기현,박찬오, 그물망 구조의 나노선을 구비한 나노선 전계효과 센서 및 그 제조방법, USA, 15/053,109 (2016)
  • 이정수,정윤하,임태욱,김기현,김성호,백창기, 3차원 적층 구조의 나노선을 구비한 나노선 전계효과 센서, USA, 14/648,969 (2015)
  • 이정수,정윤하,임태욱,김기현,김성호,백창기, 3차원 적층 구조의 나노선을 구비한 나노선 전계효과 센서, USA, 14/648,969 (2015)
  • 이정수,김기현,박찬오,김동훈, 그물망 구조의 나노선을 구비한 나노선 전계효과 센서 및 그 제조방법, 한국, 10-2015-0027608 (2014)
  • 이정수,김기현,박찬오,김동훈, 그물망 구조의 나노선을 구비한 나노선 전계효과 센서 및 그 제조방법, 한국, 10-2015-0027608 (2014)
  • 이정수,김기현,박찬오,김동훈,임태욱, 수직 미세유체 제어 장치를 이용한 나노 그물망 전계효과 센서 및 그 제조방법, 한국, 10-2014-0108371 (2014)
  • 이정수,김기현,박찬오,김동훈,임태욱, 수직 미세유체 제어 장치를 이용한 나노 그물망 전계효과 센서 및 그 제조방법, 한국, 10-2014-0108371 (2014)
  • 이정수,정윤하,임태욱,김기현,김성호,백창기, 3차원 적층 구조의 나노선을 구비한 나노선 전계효과 센서, -, PCT/KR2013/0106 (2013)
  • 이정수,김성호,임태욱,김기현,정윤하,백창기, 네트워크 구조의 나노선을 구비한 나노선 센서 및 그 제조방법, 중국, 201280018389.1 (2013)
  • 이정수,김성호,임태욱,김기현,정윤하,백창기, 네트워크 구조의 나노선을 구비한 나노선 센서 및 그 제조방법, 중국, 201280018389.1 (2013)
  • 이정수,김성호,임태욱,김기현,정윤하,백창기, 네트워크 구조의 나노선을 구비한 나노선 센서 및 그 제조방법, USA, 14/111,727 (2013)
  • 이정수,김성호,임태욱,김기현,정윤하,백창기, 네트워크 구조의 나노선을 구비한 나노선 센서 및 그 제조방법, USA, 14/111,727 (2013)
  • 이정수,임태욱,백창기,김성호,김기현,정윤하, 3차원 적층 구조의 나노선을 구비한 나노선 전계효과 센서, 한국, 10-2012-0140109 (2012)
  • 이정수,임태욱,백창기,김성호,김기현,정윤하, 3차원 적층 구조의 나노선을 구비한 나노선 전계효과 센서, 한국, 10-2012-0140109 (2012)
  • 이정수,김성호,임태욱,김기현,정윤하,백창기, 네트워크 구조의 나노선을 구비한 나노선 센서 및 그 제조방법, -, PCT/KR2012/0019 (2012)
  • 이정수,임태욱,정윤하,김성호,김기현,백창기, 네트워크 구조의 나노선을 구비한 나노선 센서 및 그 제조방법, 한국, 10-2011-0034860 (2011)
  • 이정수,임태욱,정윤하,백창기,김성호,김기현, 네트워크 구조의 나노선을 구비한 나노선 센서 및 그 제조방법, 한국, 10-2011-0034860 (2011)