교원프로필

이시우 사진
교원에 대한 정보를 나타내는 표입니다.
성명 이시우 (명예교수)
소속 화학공학과
E-mail srhee@postech.ac.kr

학력

  • 1979.09 ~ 1984.06 MASSACHUSETTS INSTITUTE OF TECHNOLOGY (MIT) (박사-반도체 및 신소재)
  • 1974.03 ~ 1976.02 한국과학기술원 (석사-화학공학과)
  • 1970.03 ~ 1974.02 서울대학교 (학사-화학공학과)

주요경력

  • 1984.06 ~ 1986.08 : MIT 재료공학과
  • 1976.01 ~ 1979.08 : 한국과학기술연구원(KIST)

전문분야

  • 화학증착공정의 연구, 전자재료 박막의 물성 평가
  • ATOMIC LAYER DEPOSITION 공정의 IN-SITU 반응 메카니즘 진단
  • 유기반도체 소자 관련 연구
  • 태양전지 소자, 소재 개발
  • 플렉시블 기판, 투명전극

학술지

국제전문학술지

  • Cyanoacetic acid tethered thiophene for well-matched LUMO level in Ru(II)-terpyridine dye sensitized solar cells, DYES AND PIGMENTS, , , - (2016)
  • Photoelectrochemical Hydrogen Generation Using C-dot/ZnO Hierarchical Nanostructure as an Efficient Photoanode, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, , 162, 366-370 (2015)
  • Solution-processed crack-free oxide films formed using SiO2 nanoparticles and organoalkoxysiloxane precursors, APPLIED SURFACE SCIENCE, , 342, 168-173 (2015)
  • Electrochemical properties of poly(3,4-ethylenedioxythiophene):poly (styrenesulfonate) and carbon black composite as an electron injector into the electrolyte containing iodide redox couple, ELECTROCHIMICA ACTA, , 161, 205-211 (2015)
  • Control of photoluminescence of carbon nanodots via surface functionalization using para-substituted anilines, SCIENTIFIC REPORTS, , 5, - (2015)
  • Size-Controlled Soft-Template Synthesis of Carbon Nanodots toward Versatile Photoactive Materials, Small, , 10, 506-513 (2014)
  • Cauliflower-like SnO2 hollow microspheres as anode and carbon fiber as cathode for high performance quantum dot and dye-sensitized solar cells, Nanoscale, , 6, 3296-3301 (2014)
  • Effect of process temperature on the structural and electrical properties of atomic layer deposited ZrO2 films using tris(dimethylamino) cyclopentadienyl zirconium precursor, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, , 32, - (2014)
  • Electroluminescence from graphene quantum dots prepared by amidative cutting of tattered graphite, NANO LETTERS, , 14, 1306-1311 (2014)
  • Soft-template synthesis of nitrogen-doped carbon nanodots: tunable visible-light photoluminescence and phosphor-based light-emitting diodes, JOURNAL OF MATERIALS CHEMISTRY, , 2, 4221-4226 (2014)
  • Plasma Enhanced Atomic Layer Deposition of TiCxNy Film with Various Reactive Gases, ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, , 3, 185-191 (2014)
  • Layer-by-Layer-Assembled Quantum Dot Multilayer Sensitizers: How the Number of Layers Affects the Photovoltaic Properties of One-Dimensional ZnO Nanowire Electrodes, CHEMPHYSCHEM, , 15, 69-75 (2014)
  • Electrocatalytic carbonaceous materials for counter electrodes in dye-sensitized solar cells, Journal of Materials Chemistry A, , 1, 3202-3215 (2013)
  • Sulfur-incorporated carbon quantum dots with a strong long-wavelength absorption band, Journal of Materials Chemistry C, , 1, 2002-2008 (2013)
  • Carbon Quantum Dot-Based Field-Effect Transistors and Their Ligand Length-Dependent Carrier Mobility, ACS Applied Materials & Interfaces, , 5, 822-827 (2013)
  • Effect of the amido Ti precursors on the atomic layer deposition of TiN with NH3, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, , 31, 1A117-1A117-5 (2013)
  • Freestanding Luminescent Films of Nitrogen-Rich Carbon Nanodots toward Large-Scale Phosphor-Based White-Light-Emitting Devices, CHEMISTRY OF MATERIALS, , 25, 1893-1899 (2013)
  • High Performance Organic Field-Effect Transistors Using cyanoethyl Pullulan (CEP) High- k Polymer Cross-linked with Trimethylolpropane Triglycidyl Ether (TTE) at Low Temperatures, Journal of Materials Chemistry C, , 1, 3955-3960 (2013)
  • Concentration effect of multiwalled carbon nanotube and poly(3, 4-ethylenedioxythiophene) polymerized with poly(4-styrenesulfonate) conjugated film on the catalytic activity for counter electrode in dye sensitized solar cells, RENEWABLE ENERGY, , 50, 692-700 (2013)
  • Dielectric properties and X-ray photoelectron spectroscopic studies of niobium oxide thin films prepared by direct liquid injection chemical vapor deposition method, THIN SOLID FILMS, , 548, 195-201 (2013)
  • The physical/chemical properties and electrode performance variations of SWNT films in consequence of solution based surfactant elimination processes, ORGANIC ELECTRONICS, , 14, 2962-2972 (2013)
  • Ordered Mesoporous Tungsten Suboxide Counter Electrode for Highly Efficient Iodine-Free Electrolyte-Based Dye-Sensitized Solar Cells, CHEMSUSCHEM, , 6, 299-307 (2013)
  • Effect of the amido Ti precursors on the atomic layer deposition of TiN with NH3, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, , 31, 1A117-1-1A117-5 (2013)
  • A light scattering polymer gel electrolyte for high performance dye-sensitized solar cells, JOURNAL OF MATERIALS CHEMISTRY, , 22, 6027-6031 (2012)
  • "Knitting up" the inter-dipole gaps in dielectric surfaces: An efficient route for high performance organic field-effect transistors, JOURNAL OF MATERIALS CHEMISTRY, , 22, 6597-6602 (2012)
  • Quasi-ordering in spontaneously associated surface dipoles: an intrinsic interfacial factor for high-k polymer insulated organic field-effect transistors, JOURNAL OF MATERIALS CHEMISTRY, , 22, 1482-1488 (2012)
  • Amorphous carbon as a flexible counter electrode for low cost and efficient dye sensitized solar cell, RENEWABLE ENERGY, , 41, 383-388 (2012)
  • Counter electrode system of Pt on stainless steel (SS) for electron injection into iodide redox couple, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, , 159, B6-B11 (2012)
  • A new equivalent circuit model for porous carbon electrodes in charge transfer reaction of iodide/triiodide redox couples, ELECTROCHIMICA ACTA, , 68, - (2012)
  • Facile synthesis of graphitic carbon quantum dots with size tunability and uniformity using reverse micelles, CHEMICAL COMMUNICATIONS, , 48, 5256-5258 (2012)
  • Electrochemical properties of porous carbon black layer as an electron injector into iodide redox couple, ELECTROCHIMICA ACTA, , 83, 264-270 (2012)
  • Formation of highly luminescent nearly monodisperse carbon quantum dots via emulsion-templated carbonization of carbohydrates, RSC ADVANCES, , 2, 11223-11226 (2012)
  • Low-Voltage Bendable Pentacene Thin-Film Transistor with Stainless Steel Substrate and Polystyrene-Coated Hafnium Silicate Dielectric, ACS Applied Materials & Interfaces, , 4, 2025-2032 (2012)
  • Effects of Postannealing Process on the Properties of RuO2 Films and Their Performance As Electrodes in Organic Thin Film Transistors or Solar Cells, ACS Applied Materials & Interfaces, , 4, 4588-4594 (2012)
  • Characterizing Annealing Effect of Poly (3,4-ethylenedioxythiophene) Polymerized with Poly (4-styrenesulfonate) Conjugated Film on the Molecular Arrangement and Work Function by Core-Level and Valence-Level Band Spectra, ECS Journal of Solid State Science and Technology, , 1, M10-M14 (2012)
  • Nanomechanical Thermal Analysis of Indium Films Using Silicon Microcantilevers, JAPANESE JOURNAL OF APPLIED PHYSICS, , 51, - (2012)
  • Optimization of Oxygen Annealing Process to Increase the Work Function of Mo/Ti or Cu/Ti Film by Inserting Partially Oxidized Thin Layer at Surface Region, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, , 159, H575-H581 (2012)
  • Composite Films of Oxidized Multiwall Carbon Nanotube and Poly(3,4-ethylenedioxythiophene): Polystyrene Sulfonate (PEDOT:PSS) As a Contact Electrode for Transistor and Inverter Devices, ACS Applied Materials and Interfaces, , 4, 982-989 (2012)
  • Multiwall Carbon Nanotube and Poly(3,4-ethylenedioxythiophene): Polystyrene Sulfonate (PEDOT:PSS) Composite Films for Transistor and Inverter Devices, ACS APPLIED MATERIALS & INTERFACES, , 3, 43-49 (2011)
  • Compromise of electrical leakage and capacitance density effects: a facile route for high mobility and sharp subthreshold slope in low-voltage operable organic field-effect transistors, JOURNAL OF MATERIALS CHEMISTRY, , 21, 998-1004 (2011)
  • In-Situ Synchrotron X-Ray Scattering Study of Thin Film Growth by Atomic Layer Deposition, JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, , 11, 1577-1580 (2011)
  • Sub-micrometer-sized Graphite As a Conducting and Catalytic Counter Electrode for Dye-sensitized Solar Cells, ACS APPLIED MATERIALS & INTERFACES, , 3, 857-862 (2011)
  • Key technological elements in dye-sensitized solar cells (DSC), KOREAN JOURNAL OF CHEMICAL ENGINEERING, , 28, 1481-1494 (2011)
  • Molecular design and synthesis of ruthenium(II) sensitizers for highly efficient dye-sensitized solar cells, JOURNAL OF MATERIALS CHEMISTRY, , 21, 12389-12397 (2011)
  • Drip and evaporation method for dye -TiO(2) nano junction formation in dye sensitized solar cells, RSC ADVANCES, , 1, 518-522 (2011)
  • Solution-based fabrication of ZnO /ZnSe heterostructure nanowire arrays for solar energy conversion, JOURNAL OF MATERIALS CHEMISTRY, , 21, 17816-17822 (2011)
  • High performance quasi-solid-state dye-sensitized solar cells based on poly(lactic acid -co-glycolic acid), JOURNAL OF POWER SOURCES, , 196, 10532-10537 (2011)
  • Carbon-nanofiber counter electrodes for quasi-solid state dye -sensitized solar Cells, JOURNAL OF POWER SOURCES, , 196, 10798-10805 (2011)
  • Low-temperature self-curable polyacrylate copolymer gate insulator for hysteresis-free organic field -effect transistors, ORGANIC ELECTRONICS, , 12, 2040-2046 (2011)
  • Quasi-ordering in spontaneously associated surface dipoles: an intrinsic interfacial factor for high-k polymer insulated organic field-effect transistors, JOURNAL OF MATERIALS CHEMISTRY, , 22, 1482-1488 (2011)
  • Counter electrode system of Pt on stainless steel (SS) for electron injection into iodide redox couple, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, , 159, B6-B11 (2011)
  • Effect of the top electrode material on the resistive switching of TiO2 thin film, MICROELECTRONIC ENGINEERING, , 87, 98-103 (2010)
  • Plasma Damage on the OTS Treated SiO2 Substrate in the Source/Drain Electrode Deposition Process, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, , 157, H349-H354 (2010)
  • Plasma Damage on the OTS Treated SiO2 subtrate in the Source/Drain Electrode Deposition Process, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, , 157, H349-H354 (2010)
  • Improved performance of dye-sensitized solar cells with TiO2/alumina core-shell formation using atomic layer deposition, JOURNAL OF POWER SOURCES, , 195, 5138-5143 (2010)
  • Hysteresis-free organic field-effect transistors with high dielectric strength cross-linked polyacrylate copolymer as a gate insulator, ORGANIC ELECTRONICS, , 11, 836-845 (2010)
  • Chemical Reaction Mechanism in the Atomic Layer Deposition of TaCxNy Films Using tert-Butylimidotris(diethylamido)tantalum, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, , 157, H652-H656 (2010)
  • Organic field-effect transistors with cross-linked high-k cyanoethylated pullulan polymer as a gate insulator, ORGANIC ELECTRONICS, , 11, 996-1004 (2010)
  • The fabrication of highly uniform ZnO/CdS core/shell structures using a spin-coating-based successive ion layer adsorption and reaction method, NANOTECHNOLOGY, , 21, - (2010)
  • Deposition of Al-doped ZnO films on polyethylene naphthalate substrate with radio frequency magnetron sputtering, THIN SOLID FILMS, , 518, 5860-5865 (2010)
  • In situ ultraviolet photoemission spectroscopy measurement of the pentacene-RuO2/Ti contact energy structure, APPLIED PHYSICS LETTERS, , 97, - (2010)
  • Plasma-Enhanced Atomic Layer Deposition of TaCxNy Films with tert-Butylimido Tris-diethylamido Tantalum and Methane/Hydrogen Gas, ELECTROCHEMICAL AND SOLID STATE LETTERS, , 13, H426-H427 (2010)
  • Effect of self assembled monolayer on the energy structure of pentacene and Ru/Ti semiconductor-metal contact measured with in situ ultraviolet photoemission spectroscopy, JOURNAL OF MATERIALS CHEMISTRY, , 20, 9754-9759 (2010)
  • Enhanced mass sensitivity of ZnO nanorod-grown quartz crystal microbalances, SENSORS AND ACTUATORS B-CHEMICAL, , 135, 444-448 (2009)
  • Formation of Tantalum Carbide and Nitride Phases in Atomic Layer Deposition Using Hydrogen Plasma and tert-Butylimido-tris (diethylamido)-tantalum (TBTDET), and its Effect on Material Properties, CHEMICAL VAPOR DEPOSITION, , 14, 334-338 (2009)
  • LOW-OPERATING VOLTAGE ORGANIC FIELD-EFFECT TRANSISTORS WITH HIGH-K CROSS-LINKED CYANOETHYLATED PULLULAN POLYMER GATE DIELECTRICS, JOURNAL OF MATERIALS CHEMISTRY, , 19, 5250-5257 (2009)
  • SiO2 Atomic Layer Deposition Using Tris(dimethylamino)silane and Hydrogen Peroxide Studied by in Situ Transmission FTIR Spectroscopy, JOURNAL OF PHYSICAL CHEMISTRY C, , 113, 8249-8257 (2009)
  • Deposition of Al-doped ZnO thin-films with radio frequency magnetron sputtering for a source/drain electrode for pentacene thin-film transistor, THIN SOLID FILMS, , 517, 4644-4649 (2009)
  • Effect of Cu, CuO, and Cu-CuO Bilayer Source/Drain Electrodes on the Performance of the Pentacene Thin-Film Transistor", JOURNAL OF THE ELECTROCHEMICAL SOCIETY, , 156, H634-H639 (2009)
  • Fabrication of the flexible pentacene thin-film transistors on 304 and 430 stainless steel (SS) substrate, ORGANIC ELECTRONICS, , 10, 970-977 (2009)
  • Atomic layer deposition of hafnium silicate film for high mobility pentacene thin film transistor applications, JOURNAL OF MATERIALS CHEMISTRY, , 19, 6857-6864 (2009)
  • Effect of post annealing on the resistive switching of TiO2 thin film, MICROELECTRONIC ENGINEERING, , 86, 2153-2156 (2009)
  • Resistive switching characteristics of ZnO thin film grown on stainless steel for flexible nonvolatile memory devices, APPLIED PHYSICS LETTERS, , 95, 262113-262113 (2009)
  • Characterization of poly(vinylidene fluoride-trifluoroethylene) 50/50 copolymer films as a gate dielectric, JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, , 19, 45-50 (2008)
  • Resistance switching behaviors of hafnium oxide films grown by MOCVD for nonvolatile memory applications, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, , 155, H92-H96 (2008)
  • Deposition of NiOx thin films with radio frequency magnetron sputtering and their characteristics as a source/drain electrode for the pentacene thin film transistor, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, , 26, 1787-1793 (2008)
  • Self-assembled monolayer formation on molybdenum with octadecyltrichlorosilane and phenethyltrichlorosilane and measurement of molybdenum-pentacene interface properties, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, , 155, H357-H362 (2008)
  • Phase formation in the tantalum carbonitride film deposited with atomic layer deposition using ammonia, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, , 155, H823-H828 (2008)
  • Effect of molybdenum electrode annealing on the interface properties between metal and pentacene, ORGANIC ELECTRONICS, , 9, 551-556 (2008)
  • Pentacene thin-film transistor with NiOx as a source/drain electrode deposited with sputtering, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, , 155, H899-H902 (2008)
  • Metal-semiconductor contact in organic thin film transistors, JOURNAL OF MATERIALS CHEMISTRY, , 18, 5437-5444 (2008)
  • Radio frequency sputter deposition of single phase cuprous oxide using Cu2O as a target material and its resistive switching properties, THIN SOLID FILMS, , 517, 967-971 (2008)
  • ATOMIC VAPOR DEPOSITED TANTALUM CARBO-NITRIDE FILM USING TBTDET AND HYDROGEN, ECS TRANSACTIONS, , 16, 355-362 (2008)
  • Quantitative structure and property analysis of nanoporous low dielectric constant SiCOH thin films, JOURNAL OF PHYSICAL CHEMISTRY C, , 111, 10848-10854 (2007)
  • The electrical and interface properties of metal-ferroelectric (lanthanum substituted bismuth titanate: BLT)-insulator-semiconductor (MFIS) structures with various insulators, JOURNAL OF MATERIALS SCIENCE, , 42, 652-659 (2007)
  • Contact resistance between pentacene and indium-tin oxide (ITO) electrode with surface treatment, ORGANIC ELECTRONICS, , 8, 690-694 (2007)
  • Effect of electrode material on the resistance switching of Cu2O film, APPLIED PHYSICS LETTERS, , 91, - (2007)
  • Electronic characterization of Al/PMMA[poly(methyl methacrylate)]/p-Si and Al/CEP(cyanoethyl pullulan)/p-Si structures, ORGANIC ELECTRONICS, , 7, 205-212 (2006)
  • Deposition of copper dots from chemical vapor deposition with [Cu(I)(hfac)](2)(DVTMSO) and [Cu(I)(hfac)](2)(HD), ELECTROCHEMICAL AND SOLID STATE LETTERS, , 9, - (2006)
  • Thermal stability of chemical vapor deposition grown W and WNx thin films in low-k integration structure, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, , 24, 1428-1431 (2006)
  • Deposition of Bi4-xNdxTi3O12 films with direct liquid injection metallorganic chemical vapor deposition and characterization of ferroelectric properties, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, , 153, - (2006)
  • Plasma enhanced chemical vapor deposition of silicon oxide films with divinyldimethylsilane and tetravinylsilane, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, , 24, 291-295 (2006)
  • Cyclic atomic layer deposition of hafnium aluminate thin films using tetrakis(diethylamido)hafnium, trimethyl aluminum, and water, CHEMICAL VAPOR DEPOSITION, , 12, 125-129 (2006)
  • Iridium(III) tris-cyclometalated complexes with diphenyloxazolic ligands: influence of ligand structure on electrochemical and photophysical properties, TRANSITION METAL CHEMISTRY, , 30, 786-791 (2005)
  • Growth of hafnium aluminate thin films by direct liquid injection metallorganic CVD using Hf[N(C2H5)(2)](4) and Al((OC3H7)-C-i)(3), JOURNAL OF THE ELECTROCHEMICAL SOCIETY, , 152, - (2005)
  • Comparative study of Cu-precursors for 3D focused electron beam induced deposition (vol 151, pg C535, 2004 and vol 151, pg C590, 2004), JOURNAL OF THE ELECTROCHEMICAL SOCIETY, , 152, - (2005)
  • Comparative study of Cu-precursors for 3D focused electron beam induced deposition (vol 151, pg C590, 2004), JOURNAL OF THE ELECTROCHEMICAL SOCIETY, , 152, - (2005)
  • Atomic layer chemical vapor deposition (ALCVD) of Hf and Zr silicate and aluminate high-k gate dielectric for next generation nano devices, JOURNAL OF CHEMICAL ENGINEERING OF JAPAN, , 38, 578-587 (2005)
  • Direct liquid injection metal organic chemical vapor deposition of Nd2O3 thin films using Tris(2,2,6,6-tetramethyl-3,5-heptanedionato) neodymium, THIN SOLID FILMS, , 492, 19-23 (2005)
  • Interfacial modification of amorphous substrates for microcrystalline silicon growth with in situ hydrogen plasma pretreatment, PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, , 202, 2448-2453 (2005)
  • Interface and crystal structures of lanthanum substituted bismuth titanate thin films grown on Si for metal ferroelectric semiconductor structure, INTEGRATED FERROELECTRICS, , 72, 61-70 (2005)
  • Low temperature silicon dioxide film deposition by remote plasma enhanced chemical vapor deposition: growth mechanism, SURFACE & COATINGS TECHNOLOGY, , 179, 229-236 (2004)
  • Organic thin film transistors: Materials, process and devices, KOREAN JOURNAL OF CHEMICAL ENGINEERING, , 21, 267-285 (2004)
  • Atomic layer deposition of hafnium silicate thin films using HfCl2[N-SiMe3)(2)](2) and H2O, ELECTROCHEMICAL AND SOLID STATE LETTERS, , 7, - (2004)
  • Homobinuclear copper(I) hexafluoroacetylacetonate complexes with non-cyclic diene ligands, POLYHEDRON, , 23, 809-813 (2004)
  • Nanocomposite low-k SiCOH films by direct PECVD using vinyltrimethylsilane, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, , 151, - (2004)
  • Yttrium-substituted bismuth titanate (Bi4-xYxTi3O12) thin film for use in non-volatile memories, JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, , 15, 231-234 (2004)
  • Direct liquid injection metal-organic chemical vapor deposition of HfO2 thin films using Hf(dimethylaminoethoxide)(4), THIN SOLID FILMS, , 450, 272-275 (2004)
  • The effect of He or Ar/O-2 plasma treatment on Si surface prior to chemical vapor deposition of SiO2, JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, , 15, 37-41 (2004)
  • Dielectric, thermally stimulated discharge current, pyroelectric and surface morphology of PMMA thin films prepared by isothermal immersion, MOLECULAR CRYSTALS AND LIQUID CRYSTALS, , 424, 43-53 (2004)
  • Nanocomposite low-k SiCOH films by plasma-enhanced chemical vapor deposition using vinyltrimethylsilane and CO2, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, , 22, 2799-2803 (2004)
  • Atomic layer deposition of ZrO2 thin films using dichlorobis [bis-(trimethylsilyl)amido] zirconium and water, CHEMICAL VAPOR DEPOSITION, , 10, 201-205 (2004)
  • Growth of bismuth oxide films by direct liquid injection-metal organic chemical vapor deposition with Bi(tmhd)(3) (tmhd : 2,2,6,6-tetramethyl-3,5-heptanedione), THIN SOLID FILMS, , 468, 79-83 (2004)
  • Optoelectronic properties of fluorine-doped silicon nitride thin films, JOURNAL OF NON-CRYSTALLINE SOLIDS, , 343, 33-38 (2004)
  • Comparative study of Cu precursors for 3D focused electron beam induced deposition, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, , 151, - (2004)
  • Infrared spectroscopic study of atomic layer deposition mechanism for hafnium silicate thin films using HfCl2[N(SiMe3)(2)](2) and H2O, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, , 22, 2392-2397 (2004)
  • Atomic layer deposition of hafnium silicate films using hafnium tetrachloride and tetra-n-butyl orthosilicate, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, , 22, 1285-1289 (2004)
  • Fourier transform infrared spectroscopy studies on thermal decomposition of tetrakis-dimethyl-amido zirconium for chemical vapor deposition of ZrN, KOREAN JOURNAL OF CHEMICAL ENGINEERING, , 21, 1256-1259 (2004)
  • Comparative study of Cu-precursors for 3D focused electron beam induced deposition, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, , 151, C590-C593 (2004)
  • Low temperature CVD of Pb(Zr,Ti)O-3 using Pb(tmhd)(2), Zr(dmae)(4), and Ti(dmae)4, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, , 150, - (2003)
  • Effect of bismuth oxide as a buffer layer on metal-lanthanum-substituted bismuth titanate-insulator-semiconductor structures, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, , 21, 2506-2511 (2003)
  • Atomic layer deposition of zirconium silicate films using zirconium tetra-tert-butoxide and silicon tetrachloride, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, , 21, - (2003)
  • Evaluation of precursors for DLI MOCVD of ferroelectric BLT, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, , 150, - (2003)
  • Deposition of Bi4-xLaxTi3O12 films by direct liquid injection-metalorganic chemical vapor deposition, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, , 21, 340-343 (2003)
  • Effect of hydrogen remote plasma annealing on the characteristics of copper film, THIN SOLID FILMS, , 429, 255-260 (2003)
  • Deposition of La2O3 films by direct liquid injection metallorganic chemical vapor deposition, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, , 149, - (2002)
  • Plasma enhanced atomic layer deposition of SrTiO3 thin films with Sr(tmhd)(2) and Ti(i-OPr)(4), JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, , 20, 1828-1830 (2002)
  • Improvement of the SiO2/Si interface characteristics by two-step deposition with intermediate plasma treatment using N-2/He or O-2/He gas, THIN SOLID FILMS, , 408, 252-259 (2002)
  • Effect of the neutral ligand (L) on the characteristics of hexafluoroacetylacetonate (hfac)Cu(I)-L precursor and on the copper deposition process, THIN SOLID FILMS, , 409, 147-152 (2002)
  • Direct liquid injection metallorganic chemical vapor deposition of ZrO2 thin films using Zr(dmae)(4) as a novel precursor, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, , 149, - (2002)
  • Microstructure of copper films deposited on TiN substrate by metallorganic chemical vapor deposition, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, , 149, - (2002)
  • Precursors for deposition of strontium bismuth tantalate films by direct liquid injection-metallorganic chemical vapor deposition, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, , 149, - (2002)
  • Metalorganic chemical vapor deposition of copper using (hexafluoroacetylacetonate)Cu((I))(3,3-dimethyl-1-butene) with a liquid delivery system, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, , 41, 2962-2968 (2002)
  • Atomic layer deposition of zirconium silicate films using zirconium tetrachloride and tetra-n-butyl orthosilicate, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, , 20, 2096-2100 (2002)
  • Remote plasma-enhanced chemical vapor deposition of nanoporous low-dielectric constant SiCOH films using vinyltrimethylsilane, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, , 149, F92-F97 (2002)
  • Chemical vapor deposition of ruthenium oxide thin films from Ru(tmhd)(3) using direct liquid injection, THIN SOLID FILMS, , 413, 237-242 (2002)
  • Cyclic plasma deposition Of SiO2 films at low temperature (80 degrees C) with intermediate plasma treatment, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, , 20, 398-402 (2002)
  • Composition and thickness uniformity of chemical vapor deposited barium strontium titanate films on a patterned structure, ELECTROCHEMICAL AND SOLID STATE LETTERS, , 4, - (2001)
  • AFM study of SINx : H surfaces treated by hydrogen plasma: modification of morphological and scaling characteristics, SURFACE & COATINGS TECHNOLOGY, , 137, 265-269 (2001)
  • Low temperature chemical vapor deposition of (Ba, Sr) TiO3 thin films with Ti(mpd)(tmhd)(2) as a Ti source, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, , 148, - (2001)
  • The effect of carrier gas and H(hfac) on MOCVD Cu films using (hfac)Cu(1,5-COD) as a precursor, JOURNAL OF ELECTRONIC MATERIALS, , 30, 1028-1034 (2001)
  • Effect of carrier gas on chemical vapor deposition of copper with (hexafluoroacetylacetonate) Cu-(I)(3,3-dimethyl-1-bulene), JOURNAL OF THE ELECTROCHEMICAL SOCIETY, , 148, - (2001)
  • Microstructure and initial growth characteristics of the low temperature microcrystalline silicon films on silicon nitride surface, JOURNAL OF APPLIED PHYSICS, , 90, 217-221 (2001)
  • Chemical vapor deposition of nickel oxide films from Ni(C5H5)(2)/O-2, THIN SOLID FILMS, , 391, 57-61 (2001)
  • Chemical vapor deposition of copper film from hexafluoroacetylacetonateCu((I))vinylcyclohexane, THIN SOLID FILMS, , 397, 70-77 (2001)
  • Characterization of laser annealed polycrystalline silicon films on various substrates, JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, , 12, 697-701 (2001)
  • Bulk and interface properties of low-temperature silicon nitride films deposited by remote plasma enhanced chemical vapor deposition, JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, , 12, 515-522 (2001)
  • Improvement of the SiO2/Si interface characteristics by two-step deposition with intermediate plasma treatment using O-2/He gas, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, , 19, 2067-2072 (2001)
  • Effect of the precursors on the deposition of (Ba, Sr)TiO3 films, JOURNAL DE PHYSIQUE IV, , 11, 215-222 (2001)
  • Metallorganic chemical vapor deposition of Pb(Zr, Ti)O-3 films using a single mixture of metallorganic precursors, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, , 148, - (2001)
  • Characterization of deposition process, microstructure and interfacial states of silicon dioxide film using tetraethylorthosilicate/O-2 with various dilution gases, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, , 148, - (2001)
  • Property of hexafluoroacetylacetonateCu(I) (3,3-dimethyl-1-butene) as a liquid precursor for chemical vapor deposition of copper films, ELECTROCHEMICAL AND SOLID STATE LETTERS, , 3, 135-137 (2000)
  • Electrical properties of bulk silicon dioxide and SiO2/Si interface formed by tetraethylorthosilicate-ozone chemical vapor deposition, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, , 147, 1473-1476 (2000)
  • Effect of back-channel plasma etching on the leakage current of a-Si : H thin film transistors, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, , 39, 1051-1053 (2000)
  • Chemical vapor deposition of Ru thin films by direct liquid injection of Ru(OD)(3) (OD=octanedionate), JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, , 18, 2400-2403 (2000)
  • Metalorganic chemical vapor deposition of nickel films from Ni(C5H5)(2)/H-2, JOURNAL OF MATERIALS RESEARCH, , 15, 1828-1833 (2000)
  • Electrical properties of bulk silicon dioxide and SiO2/Si interface formed by tetraethylorthosilicate (TEOS)-oxygen plasma enhanced chemical vapor deposition, JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, , 11, 579-586 (2000)
  • Remote plasma enhanced metalorganic chemical vapor deposition of TiN from tetrakis-dimethyl-amido-titanium, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, , 18, 2822-2826 (2000)
  • Dry etching of copper film with hexafluoroacetylacetone via oxidation process, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, , 17, 154-157 (1999)
  • Feature scale simulation of selective chemical vapor deposition process, THIN SOLID FILMS, , 339, 270-276 (1999)
  • Hexafluoroacetylacetonate Cu vinylcyclohexane as a liquid precursor for low-temperature chemical vapor deposition of copper thin films, ELECTROCHEMICAL AND SOLID STATE LETTERS, , 2, 22-23 (1999)
  • Comparison of tetrakis(dimethylamido)titanium and tetrakis(diethylamido)titanium as precursors for metallorganic chemical vapor deposition of titanium nitride, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, , 146, 1804-1808 (1999)
  • Effects of annealing in O-2 and N-2 on the microstructure of metal organic chemical vapor deposition Ta2O5 film and the interfacial SiO2 layer, JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, , 10, 113-119 (1999)
  • The effect of additives on the viscosity of dimethylaluminum hydride and FTIR diagnostics of the gas-phase reaction, THIN SOLID FILMS, , 348, 130-133 (1999)
  • (hfac)Cu(I)(MP) (hfac=hexafluoroacetylacetonate, MP=4-methyl-1pentene) and (hfac)Cu(I)(DMB) (DMB=3,3-dimethyl-1-butene) for the chemical vapor deposition of copper film, THIN SOLID FILMS, , 350, 10-13 (1999)
  • Comparison of (Ba,Sr)TiO3 thin films from metallorganic chemical vapor deposition with Ti(dmae)(4) and Ti(i-OPr)(2)(tmhd)(2) as Ti sources, ELECTROCHEMICAL AND SOLID STATE LETTERS, , 2, 507-509 (1999)
  • Chemical vapor deposition of barium strontium titanate thin films by the direct liquid injection of Ba(methd)(2), Sr(methd)(2), and Ti(mpd)(tmhd)(2) without solvent, ELECTROCHEMICAL AND SOLID STATE LETTERS, , 2, 510-511 (1999)
  • Remote plasma chemical vapour deposition of silicon films at low temperature with H-2 and He plasma gases, JOURNAL OF PHYSICS D-APPLIED PHYSICS, , 32, 1955-1962 (1999)
  • Metalorganic chemical vapor deposition of aluminum from tetramethylethylenediamine alane, JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, , 10, 285-290 (1999)
  • Microstructure and interfacial states of silicon dioxide film grown by low temperature remote plasma enhanced chemical vapor deposition, JOURNAL OF APPLIED PHYSICS, , 86, 1346-1354 (1999)
  • Chemical vapor deposition of barium strontium titanate thin films using direct liquid injection of a single cocktail solution with Ba(methd)(2), Sr(methd)(2), and Ti(MPD)(tmhd)(2), JOURNAL OF MATERIALS RESEARCH, , 14, 3988-3994 (1999)
  • Chemical vapor deposition of RuO2 thin films using the liquid precursor Ru(OD)(3), ELECTROCHEMICAL AND SOLID STATE LETTERS, , 2, 622-623 (1999)
  • Chemical vapor deposition of barium strontium titanate films with direct liquid injection of single-mixture solution, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, , 146, 3783-3787 (1999)
  • MOCVD of Ni and Ni3C films from Ni(dmen)(2)(tfa)(2), JOURNAL DE PHYSIQUE IV, , 9, 597-604 (1999)
  • Comparison of (hexafluoroacetylacetonate) Cu(vinyltrimethylsilane) and (hexafluoroacetylacetonate) Cu(allyltrimethylsilane) for metalorganic chemical vapor deposition of copper, JOURNAL OF MATERIALS RESEARCH, , 14, 975-979 (1999)
  • Metalorganic chemical vapor deposition of barium strontium titanate thin films with a more coordinatively saturated Ti precursor, Ti(dmae)(4)(dmae= dimethylaminoethoxide), JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, , 17, 3033-3037 (1999)
  • Chemical vapor deposition of barium strontium titanate films using a single mixture of metalorganic precursors, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, , 17, 3115-3117 (1999)
  • Effect of carrier gas on metal-organic chemical vapour deposition of aluminium from dimethylethylamine alane, JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, , 9, 1-4 (1998)
  • Fourier transform infrared diagnostics of gas phase reactions in the metalorganic chemical vapor deposition of aluminum from dimethylethylamine alane, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, , 16, 419-423 (1998)
  • Effect of H-2 and N-2 in the remote plasma enhanced metal organic chemical vapor deposition of TiN from tetrakis-diethyl-amido-titanium, THIN SOLID FILMS, , 312, 24-26 (1998)
  • Metal-organic chemical vapor deposition of aluminum from dimethylethylamine alane, THIN SOLID FILMS, , 312, 259-264 (1998)
  • Effect of additives on the viscosity of liquid-phase dimethylaluminum hydride, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, , 145, - (1998)
  • Prevention of oxygen incorporation in poly-Si1-xGex deposition with interfacial amorphous silicon layer, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, , 37, - (1998)
  • Microcrystalline silicon film deposition from H-2-He-SiH4 using remote plasma enhanced chemical vapor deposition, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, , 145, 2900-2904 (1998)
  • Effect of the gas-phase reaction in metallorganic chemical vapor deposition of TiN from tetrakis(dimethylamido)titanium, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, , 145, 2453-2456 (1998)
  • Effect of the carrier gas on the metal-organic chemical vapor deposition of TiN from tetrakis-dimethyl-amido-titanium, THIN SOLID FILMS, , 320, 163-165 (1998)
  • Surface passivation technique for selective hole filling by chemical vapor deposition, JOURNAL OF MATERIALS SCIENCE LETTERS, , 17, 947-949 (1998)
  • Growth rate and microstructure of copper thin films deposited with metal-organic chemical vapor deposition from hexafluoroacetylacetonate copper(I) allyltrimethylsilane, THIN SOLID FILMS, , 335, 229-236 (1998)
  • Chemical vapor deposition of copper thin films with (hexafluoroacetylacetonate)Cu(allyltrimethylsilane), ELECTROCHEMICAL AND SOLID STATE LETTERS, , 1, 32-33 (1998)
  • Growth and fractal scaling nature of copper thin films on TiN surface by metal organic chemical vapor deposition from hexafluoroacethylacetonate Cu-(I) vinyltrimethylsilane, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, , 15, 1995-2000 (1997)
  • Experimental and theoretical study of step coverage in metal-organic chemical vapor deposition of tantalum oxide thin films, THIN SOLID FILMS, , 292, 324-329 (1997)
  • Hot filament hydrocarbon infiltration method for pinhole measurement in the Si-SiO2 structure, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, , 144, 4019-4022 (1997)
  • Simplified simulation of step coverage in chemical vapor deposition with a hemispherical vapor source model, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, , 144, 1803-1807 (1997)
  • Growth of copper thin films on sputtered-TiN surfaces by metallorganic chemical vapour deposition from (hfac)Cu-(I)(VTMS), JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, , 8, 189-194 (1997)
  • Particle formation in the remote plasma enhanced chemical vapor deposition of Si films from Si2H6-SiF4-H-2, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, , 14, 478-480 (1996)
  • Effect of hydrogen plasma precleaning on the removal of interfacial amorphous layer in the chemical vapor deposition of microcrystalline silicon films on silicon oxide surface, APPLIED PHYSICS LETTERS, , 68, 2219-2221 (1996)
  • Pyrolysis mechanism of silanes, difluorosilane, and their mixtures, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, , 143, 1996-2002 (1996)
  • Microstructure and deposition rate of aluminum thin films from chemical vapor deposition with dimethylethylamine alane, APPLIED PHYSICS LETTERS, , 68, 3567-3569 (1996)
  • Structural changes of silicon dioxide films caused by synchrotron irradiation, JOURNAL OF APPLIED PHYSICS, , 80, 1236-1238 (1996)
  • Remote plasma enhanced chemical vapor deposition of silicon films at low temperatures from Si2H6-H-2-SiF4, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, , 143, 2640-2645 (1996)
  • Characterization of the Si/SiO2 interface formed by remote plasma enhanced chemical vapor deposition from SiH4/N2O with or without chlorine addition, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, , 14, 2660-2666 (1996)
  • Effect of N2O/SiH4 ratio on the properties of low-temperature silicon oxide films from remote plasma chemical vapour deposition, THIN SOLID FILMS, , 280, 43-50 (1996)
  • Remote plasma enhanced metal organic chemical vapor deposition of TiN for diffusion barrier, KOREAN JOURNAL OF CHEMICAL ENGINEERING, , 13, 510-514 (1996)
  • CHARACTERISTICS OF AEROSOL-SYNTHESIZED AIN PARTICLES, JOURNAL OF MATERIALS SCIENCE, , 31, 5701-5708 (1996)
  • KINETICS AND MECHANISMS FOR NITRIDATION OF FLOATING ALUMINUM POWDER, JOURNAL OF THE AMERICAN CERAMIC SOCIETY, , 78, 33-40 (1995)
  • CHEMICAL-VAPOR-DEPOSITION OF ALUMINUM FOR ULSI APPLICATIONS, KOREAN JOURNAL OF CHEMICAL ENGINEERING, , 12, 1-11 (1995)
  • NITRIDATION CHARACTERISTICS OF FLOATING ALUMINUM POWDER, JOURNAL OF MATERIALS SCIENCE, , 30, 1180-1186 (1995)
  • REACTION OF TIO2-AL-C IN THE COMBUSTION SYNTHESIS OF TIC-AL2O3 COMPOSITE, JOURNAL OF THE AMERICAN CERAMIC SOCIETY, , 78, 986-992 (1995)
  • EFFECTS OF CHLORINE ADDITION ON THE SILICON DIOXIDE PROPERTIES DEPOSITED WITH REMOTE PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION AT LOW-TEMPERATURES, APPLIED PHYSICS LETTERS, , 66, 3477-3479 (1995)
  • STRUCTURAL CHARACTERIZATION OF SILICON FILMS DEPOSITED AT LOW-TEMPERATURE BY REMOTE PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION, MATERIALS LETTERS, , 24, 79-83 (1995)
  • EFFECT OF OXYGEN CONTAMINATION ON THE DEPOSITION AND ETCHING PROPERTIES OF SI-H-CL-O AND SI-H-F-O SYSTEMS, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, , 142, 2405-2410 (1995)
  • EFFECT OF CARBON-SOURCES ON THE COMBUSTION SYNTHESIS OF TIC, JOURNAL OF MATERIALS SCIENCE, , 30, 4637-4644 (1995)
  • IN-SITU INFRARED SPECTROSCOPIC STUDY ON THE ROLE OF SURFACE HYDRIDES AND FLUORIDES IN THE SILICON CHEMICAL-VAPOR-DEPOSITION PROCESS, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, , 13, 2698-2702 (1995)
  • STRUCTURAL CHARACTERIZATION OF ALUMINUM FILMS DEPOSITED ON SPUTTERED-TITANIUM NITRIDE/SILICON SUBSTRATE BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION FROM DIMETHYLETHYLAMINE ALANE, APPLIED PHYSICS LETTERS, , 67, 3426-3428 (1995)
  • Effect of fluorine chemistry in the remote plasma enhanced chemical vapor deposition of silicon films from Si2H6-SiF4-H-2, KOREAN JOURNAL OF CHEMICAL ENGINEERING, , 12, 572-575 (1995)
  • EFFECT OF CARRIER GASES ON THE CHEMICAL-VAPOR-DEPOSITION OF TUNGSTEN FROM WF6-SIH4, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, , 141, 475-479 (1994)
  • EQUILIBRIUM IN THE REACTION OF TI AND C TO FORM SUBSTOICHIOMETRIC TICX, JOURNAL OF MATERIALS SCIENCE LETTERS, , 13, 323-325 (1994)
  • EFFECT OF PRECURSORS ON THE COMBUSTION SYNTHESIS OF TIC-AL2O3 COMPOSITE, JOURNAL OF MATERIALS RESEARCH, , 9, 1761-1766 (1994)
  • THERMAL PLASMA SYNTHESIS OF SIC-SI3N4 COMPOSITE POWDERS FROM SICH3CL3-NH3-H2, JOURNAL OF MATERIALS ENGINEERING AND PERFORMANCE, , 2, 407-412 (1993)
  • EFFECT OF IRON AND COBALT ADDITION ON TIC COMBUSTION SYNTHESIS, JOURNAL OF MATERIALS RESEARCH, , 8, 3202-3209 (1993)
  • EFFECT OF ALUMINUM ADDITION ON THE COMBUSTION REACTION OF TITANIUM AND CARBON TO FORM TIC, JOURNAL OF MATERIALS SCIENCE, , 28, 6669-6675 (1993)
  • GAS-PHASE SYNTHESIS OF AIN POWDERS FROM ALCL3-NH3-N2, JOURNAL OF MATERIALS SCIENCE, , 28, 57-64 (1993)
  • SIMULATION OF CVD PROCESS BY BOUNDARY INTEGRAL TECHNIQUE, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, , 139, 1714-1720 (1992)
  • THERMODYNAMIC EVALUATION OF EQUILIBRIUM COMPOSITIONS IN THE SI-H-F SYSTEM, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, , 139, 3539-3544 (1992)
  • THERMAL PLASMA CHEMICAL VAPOR-DEPOSITION FOR SIC POWDERS FROM SICH3CL3-H2, JOURNAL OF MATERIALS SCIENCE, , 26, 5957-5964 (1991)

국내전문학술지

  • 새로운 Copper 전구체를 이용한 구리점 증착, 한국진공학회지, , 15, 485-492 (2006)
  • Deposition of copper dots withe new copper precursors, JOURNAL OF THE KOREAN VACUUM SOCIETY, , 15, 485-492 (2006)

일반학술지

  • METAL ORGANIC CHEMICAL VAPOR DEPOSITION OF NICKEL FILMS FROM NI(C5H5)/H2, JOURNAL OF MAGNETIC RESONANCE, , 15, 1828- (2000)
  • Effect of Synchrotron Radiation on the Reaction and Structure of Oxide Films Deposited with Remote Plasma CVD at Low Temperatures, JOURNAL OF APPLIED PHYSICS, , 80, 1236- (1996)
  • Effect of Chlorine Addition on the Low Temperature Silicon Oxide Properties Deposited with Remote Plasma CVD, APPLIED PHYSICS LETTERS, , 66, 3477- (1995)

학술회의논문

  • 액체직접주입방식의 MOCVD 공정에 의한 Bi4-xNdxTi3O12 박막의 증착 및 평가, 제13회 한국 반도체 학술대회 초록집, 0, 0, 689- (2006)
  • Plasma Enhanced chemical vapor Deposition and Characterization of SiCOH low k Films with Vinyltrimethylsilane, di and Tetravinyl silane, 제13회 한국 반도체 학술대회 초록집, 0, 0, 873- (2006)
  • Direct Liquid Injection Metal Organic Chemical Vapor Deposition of HfO2 Thin Films Using Hf(dimethylaminoethoxide)4, 2003년도 한국반도체장비학회 추계학술대회 논문집, 0, 0, 45-49 (2003)
  • Copper Dots Deposition Using New Precursors [Cu(I)(hfac)]2(DVTMSO) and [Cu(I)(hfac)]2(HD), Proc. of the 203rd Int. Conf. on CVD and EUROCVD, 0, 0, 1305- (2003)
  • 새로운 단일 전구체를 이용한 Zr silicate의 원자층 화학증착법, 2002년도 한국재료학회 초록집, 0, 0, 96- (2002)
  • DLI-MOCVD 공정을 이용한 Hf aluminate 증착, 2002년도 한국재료학회 초록집, 0, 0, 83- (2002)
  • Direct liquid injection-metal organic chemical vapor deposition 공정을 이용한 BLT 강유전체 박막의 증착, 화학공학의 이론과 응용, 0, 0, 4810-4813 (2002)
  • VTMS 전구체를 이용한 직접 플라즈마 CVD 저유전체 박막의 제조 및 평가, 화학공학의 이론과 응용, 0, 0, 4834-4837 (2002)
  • Chloride 화합물과 Alkoxide 화합물을 이용한 Zirconium Silicate 박막의 원자층 화학증착, 제1회 나노 화학공정 심포지움, 0, 0, 63-65 (2002)
  • Electronic properties and crystal structures of lantanum substituted bismuth titanate thin films grown on Si for a metal ferroelectric semiconductor structure, 제 1회 나노 화학공정 심포지움 초록집, 0, 0, 68-70 (2002)
  • DLI-MOCVD를 이용한 BLT 박막의 증착과 전구체 평가, 제 3 회 고유전체 및 강유전체 소자/재료 workshop, 0, 0, 39-40 (2001)
  • DLI-MOCVD를 이용한 BLT 박막의 증착과 전구체 평가, 한국재료학회 논문개요집, 0, 0, 97- (2001)
  • DLI-MOCVD 공정을 이용한 SBT 박막 및 증착 및 전구체 특성평가, 화학공학의 이론과 응용, 0, 0, 2170- (2001)
  • 강유전체 박막(BLT)의 증착과 전구체 평가, 대한금속재료학회 초록집, 0, 0, 232- (2000)
  • 산소 플라즈마 중간처리에 의한 SiO2/Si 계면 특성 개선, 대한금속재료학회 초록집, 0, 0, 237- (2000)
  • 수송기체가 구리 MOCVD 공정에 미치는 효과, 대한금속재료학회 초록집, 0, 0, 239- (2000)
  • MOCVD of ZrO2 Thin Film using Zr(DMAE)4 as a precursor for High-k Dielectrics, 대한금속재료학회 초록집, 0, 0, 238- (2000)
  • He/O2 플라즈마 전처리를 통한 산화막 계면 특성 개선 효과, 한국화학공학회지, 0, 0, 4689- (2000)
  • 구리 전구체의 특성 평가 및 구리 MOCVD에서의 수송 기체 효과, CVD 심포지움, 0, 0, 80- (2000)
  • Chemical Vapor Deposition of TiO2, ZrO2, and Pb(Zr,Ti)O3 films with Pb(tmhd)2-PMDT, Ti(dmae)4, and Zr(dmae)4 as metalorganic precursors, 제3회 CVD 심포지움 논문집, 0, 0, 15- (2000)
  • Composition and thikcness uniformity of chemically vapor deposited barium strontium titanate films on a patterned structure, 제 3회 CVD 심포지엄 논문집, 0, 0, 58- (2000)
  • Effect of Ti precursor on the chemical vapor deposition of (Ba,Sr)TiO3, 197th meeting of the electrochemical society, 0, 0, - (2000)
  • 저온 산화막 증착 공정에 대한 희석기체의 영향, 한국 반도체 학술대회, 0, 0, 665- (2000)
  • Chemical vapor deposition of Pb(Zr, , 0, 0, 367- (2000)
  • Comparison of Bi(TMHD)3 and Bi(Ph)3 Precursor as a Bi Source for the Depositon of SrBi2Ta2O9 Films, 한국반도체학술대회 논문집, 0, 0, 551- (2000)
  • Cu MOCVD Process using hfacCu(I)DMB(3,3-dimethyl-1-butene) Liquid Precusor, 한국반도체학술대회 논문집, 0, 0, 91- (2000)
  • Ru(OD)3의 direct liquid injectio에 의한 Ru박막의 화학증착, 한국반도체학술대회, 0, 0, - (2000)
  • 저온 산화막 증착 공정에 대한 희석 기체의 영향, 한국 반도체 학술 회의 논문지, 0, 0, 665- (2000)
  • The Preparation of PbTiO3 Thin Films by Liquid Source Chemical Vapor Deposition Using a Single Mixture Solution and the Effect of Organic Solvent on Thermal Stability of Precursors, 16th Inter. Japan-Korea Seminar on Ceramics, 0, 0, 363-366 (1999)
  • 레이저 어닐링에 따른 폴리실리콘 박막의 재결정화 특성 분석, 한국화학공학회지, 0, 0, 4377- (1999)
  • TEOS/O2 PECVD에 의한 산화막과 SiO2/Si계면 특성, 한국화학공학회지, 0, 0, 4517- (1999)
  • 구리(I) 전구체의 개발동향, 제2회 CVD심포지움, 0, 0, 109- (1999)
  • 유기금속 화학증착을 위한 (Ba,Sr)TiO3 전구체의 개발 동향, 제 2회 CVD 심포지움, 0, 0, 27- (1999)
  • Chemical vapor deposition of RuO2 thin films using Ru(OD)3, 제2회 CVD심포지움,, 0, 0, 16- (1999)
  • MOCVD Cu박막의 기상 및 표면 반응 메카니즘 연구, 제2회 CVD심포지움, 0, 0, 127- (1999)
  • Morphology enhancement of (Ba,Sr)TiO3 thin films with Ti(dmae)4 as a Ti source by direct liquid injection MOCVD, 제2회 CVD심포지움,, 0, 0, 44- (1999)
  • 배위력이 향상된 Ti전구체를 이용한 MOCVD에 의한 (Ba,Sr)TiO3박막의 연구, 한국재료학회 춘계 학술발표, 0, 0, -11- (1999)
  • 니켈로센을 이용한 니켈 박막의 화학증착, 화학 공학의 이론과 응용, 0, 0, 1921- (1999)
  • 유기금속 화학증착을 위한 (Ba,Sr)TiO3 전구체의 평가, 화학공학의 이론과 응용, 0, 0, 1637- (1999)
  • 유기금속화학증착을 위한 Cu(I) 전구체의 평가, 화학공학의 이론과 응용, 0, 0, 1625- (1999)
  • Chemical vapor deposition of copper film from (hfac)Cu(VCH) and (hfac)Cu(MP), 한국반도체학술대회 논문집, 0, 0, 257- (1999)
  • FLOURINATED SILICON NITRIDE FILM DEPOSITED AT LOW TEMPERATURES FROM SiH4-SiF4-NH3, Mat. Res. Soc. Symp. Proc.,Amorphous and Microcrystalline Silicon Technology-1998,, 0, 0, 471- (1999)
  • Remote plasma enhanced chemical vapor deposition of TiN from tetrakis-dimethyl-amido-titanim, Proceedings of 8th Asian Pacific Confederation of Chemical Engineers, 0, 0, 1469- (1999)
  • Remote plasma enhanced chemical vapor deposition of TiN from tetrakis-dimethyl-amido-titanim, Proceedings of 8th Asian Pacific Confederation of Chemical Engineers, 0, 0, 1469- (1999)
  • Remote plasma enhanced chemical vapor deposition of TiN from tetrakis-dimethyl-amido-titanium, Proceedings of 8th Asian Pacific Confederation of Chemical Engineers, 0, 0, 1469- (1999)
  • 산화공정을 이용한 구리박막의 식각방법, 한국재료학회, 0, 0, - (1998)
  • 유기금속 화학증착법을 이용한 BST 박막의 제조, 화학공학의 이론과 응용, 0, 0, 3797- (1998)
  • Evaluation of Cu(I) Precursors for Metal Organic Chemical Vapor Deposition of Copper Thin Films, 98 ADMETA, 0, 0, 71- (1998)
  • SrTiO3 유기금속화학증착용 Sr 전구체에 대한 연구, 화학공학의 이론과 응용, 0, 0, 917- (1998)
  • Effect of Additives on Viscosity and FT-IR Diagnostics of Gas Phase Reactions from Dimethylaluminum hydride(DMAH), 제5회 한국반도체학술대회, 0, 0, 601- (1998)
  • Fourier transform infrared spectroscopy를 이용한 tetrakis(dimethytlamino)zirconium의 열분해에 관한 연구, 화학공학의 이론과 응용, 0, 0, 3861- (1998)
  • TiN 유기금속 화학증착을 위한 tetrakis-dimethyl-amido-titanium의 열분해특성에 한 연구, 화학공학의 이론과 응용, 0, 0, 913- (1998)
  • FT-IR Diagnostics of Gas Phase Reactions and Effect of Carrier Gases in the Metal-Organic Chemical Vapor Deposition of Aluminum from Dimethylethylamine Alane, Proc. of the 14th Int. Conf. on CVD and EUROCVD-11, 0, 0, 1551- (1997)
  • Gas Phase Reaction Mechanism for Metal-Organic Chemical Vapor Deposition of Aluminum from Dimethylethylamine Alane, 제4회 한국 반도체 학술대회 논문집, 0, 0, 413- (1997)
  • Hexafluoroacetylacetonate Copper(I) Allyltrimethylsilane을 이용한 초고집적 회로용 구리박막의 유기금속 화학증착, 화학공학의 이론과 응용, 0, 0, 3121- (1997)
  • MOCVD 공정에 있어서 구리(I) 전구체들의 열적 안정성과 반응 메카니즘에 관한 연구, 화학공학의 이론과 응용, 0, 0, 3117- (1997)
  • Teteakis(dimethylamido)titanium을 이용한 TiN유기금속화학증착에서의 기상반응에 관한 연구, 화학공학의 이론과 응용, 0, 0, 1225- (1997)
  • TMEDAA를 이용한 알루미늄 박막의 유기금속 화학증착에 관한 연구, 화학공학의 이론과 응용, 0, 0, 3157- (1997)
  • Defect of low temperature Si-rich hydrogenated silicon nitride films deposited by remote plasma enhanced CVD, Key Tech., 0, 0, 172- (1996)
  • In-situ FTIR study on the role of surface hydrides and fluorides in low-temperature Si CVD, Proc. of the 13th Int. Conf. on CVD, 0, 0, 189- (1996)
  • Metalorganic chemical vapor deposition(MOCVD) of aluminum from dime thylethylaminealane (DMEAA), Proc. of the 13th Int. Conf. on CVD, 0, 0, 794- (1996)
  • Remote plasma enhanced metal organic chemical vapor deposition of TiN for diffusion barrier, Key Tech. & Appl. of Adv. Mater., Proc. of 2nd Korean-Japan Symposium on Adv. Mater., 0, 0, 202- (1996)
  • Simulation of Al MOCVD process from dimethylethylaminealane (DMEAA), Proc. of the 13th Int. Conf. on CVD, 0, 0, 131- (1996)
  • The Hydrogenation Effect of Heterostructured CMOS TFTs in Low Temperature RTCVD, Thin Film Transistor Tech., Proc. of Electrochem. Soc, 0, 0, 358- (1996)
  • Deposition of Yttrium or Lanthanum-substituted Bismuth Titanate Films by DLI-MOCVD for Use in Non-Volatile Memories, Proc. of the 203rd Int. Conf. on CVD and EUROCVD, 0, 0, 1419- (0000)
  • Dichlorobis[bis(trimethylamido)]hafnium과 물을 이용한 Hafnium Silicate의 단원자층 화학증착, 한국화학공학회 2003년도 가을 학술대회, 0, 0, - (0000)
  • Reduction of contact resistance between pentacene and ITO electrode by surface treatments, Korea-Japan joint forum 2005, 0, 0, - (0000)
  • In-situ diagnostics and characterization of hafnium silicate films deposited by atomic layer deposition, Korean ALD Workshop 2006, 0, 0, - (0000)
  • In-situ FT-IR diagnosis of precursors used in ALD process, AVS 5th International Conference on Atomic Layer Deposition, 0, 0, - (0000)
  • In-situ diagnosis using FT-IR and the characterization of Hf nitride films, 제31회 한국진공학회 학술대회, 0, 0, - (0000)
  • Self assembled monolayers for interface engineering and device applications, International Union of Materials Research Society, 0, 0, - (0000)
  • In-situ diagnosis using FT-IR spectroscopy and the characterization of Hf nitride films, IUVSTA ECM-100 special symposium, 0, 0, - (0000)
  • 차세대 저항메모리(Resistive Random Access Memory)용 NiO 박막 공정 및 특성, 국가지정연구실(NRL) 반도체 기술교류회 워크샵, 0, 0, - (0000)
  • Reduction of Contact Resistance between Indium-Tin Oxide and Pentacene by Surface, 국가지정연구실(NRL) 반도체 기술교류회 워크샵, 0, 0, - (0000)
  • Resistance Switching Properties of Cu2O Thin Film, 국가지정연구실(NRL) 반도체 기술교류회 워크샵, 0, 0, - (0000)
  • Resistive Switching Properties of TiO2 Thin Films Using RF Magnetron Sputtering, 국가지정연구실(NRL) 반도체 기술교류회 워크샵, 0, 0, - (0000)
  • Improvement of interfacial properties between pentacene and silicon dioxide by self-assembled monolayers, 7th Korea-Japan symposium on Materials, 0, 0, - (0000)
  • CVD/ALD process monitoring system (The evaluation of a precursor using FT-IR spectroscopy, thermal analysis, and the deposition chamber), 2006 한국화학공학회 가을 학술대회, 0, 0, - (0000)
  • Properties of organic gel( poly[vinylidene fluoride-trifluoroethylene ] 50/50 copolymer and poly vinyl phenol ) for polymer gate dielectric thin films prepared by spin coating, 지역 R&D 클러스터사업단 ‘경북 융합형 첨단 유기겔 신소재 연구개발 클러스터 구축사업’ 제 2 차 워크샵, 0, 0, - (0000)
  • 차세대 게이트 전극용 HfCN 박막 증착 및 특성 평가, 제 14회 한국반도체 학술 대회, 0, 0, - (0000)
  • Resistive Switching Properties of TiO2 Thin Films Using RF Magnetron Sputtering, 제 14회 한국반도체 학술 대회, 0, 0, - (0000)
  • Interface Engineering in Organic Devices - Self Assembled Monolayer, 한국화학공학회 춘계 학술대회, 나노공정 심포지움, 0, 0, - (0000)
  • Effect of annealing on the contact resistance between Mo electrode and pentacene, 18th IC ME, 0, 0, - (0000)
  • Characteristics of Tantalum Carbon Nitride films deposited by Plasma Enhanced Atomic Layer Deposition method, AVS 7th International Conference on Atomic Layer Deposition, 0, 0, - (0000)
  • In-situ diagnosis of hafnium and tantalum precursors using Fourier transform infrared (FT-IR) spectroscopy, AVS 7th International Conference on Atomic Layer Deposition, 0, 0, 130- (0000)
  • In-situ diagnostics of atomic layer chemical vapor deposition process, EUROCVD 16, 0, 0, - (0000)
  • 원자층 증착법을 이용한 Tantalum carbonitride 박막의 증착 및 특성평가, 2007년도 한국 재료 학회 추계 학술 발표대회, 0, 0, - (0000)
  • Hysteresis characterization of PVPh(polyvinylphenol) films through various cross-linking condition, 2007년도 한국 재료 학회 추계 학술 발표대회, 0, 0, - (0000)
  • In-situ diagnosis of tantalum precursors using Fourier transform infrared (FT-IR) spectroscopy, 2007년도 한국 재료 학회 추계 학술 발표대회, 0, 0, - (0000)
  • Unipolar and bipolar resistive switching of nonstoichiometric TiOx thin films, 2007년도 한국 재료 학회 추계 학술 발표대회, 0, 0, - (0000)
  • Interface structure and initial microstructure of TaN films deposited by Atomic Layer Deposition with XRR and GISAX S using Synchrotron Radiation, MRS 2007 Fall Meeting, 0, 0, - (0000)
  • Pentacene 반도체 소자에서 전극의 일함수가 소자 특성 및 Pentacene/전극 계면의 접촉저항에 미치는 영향 분석, 제15회 한국반도체학술대회, 0, 0, 956- (0000)
  • Top electrode dependence of resistive switching in nonstoichiometric TiOx thin film, 제15회 한국반도체학술대회, 0, 0, 954- (0000)
  • 원자층 기상증착공정(Atomic Vapor Deposition)을 이용한 TaCN 박막의 특성 평가, 2008년도 봄 총회 및 학술대회, 0, 0, 335- (0000)
  • 펜타센과 일함수가 다양한 전극을 이용한 접촉저항 측정 및 소자 특성 분석, 2008년도 봄 총회 및 학술대회, 0, 0, 336- (0000)
  • Solid phase formation and stoichiometry of the plasma-enhanced atomic layer deposited Tantalum carbo-nitride films using TBTDET and hydrogen, 한국화학공학회/2008년도 봄 총회 및 학술대회, 0, 0, 341- (0000)
  • 원자층 증착 공정을 이용한 탄탈륨 카보나이트라이드 박막의 조성 및 고체 상 변화에 따른 박막 특성 연구, 2008년도 한국 재료학회 춘계학술발표대회 및 제 14회 신소재 심포지엄, 0, 0, 24- (0000)
  • FT-IR diagnosis of the gas phase reaction for the deposition of tantalum carbo-nitride film using TBTDET, 제 2회 반도체공정 진단 Workshop, 0, 0, 119- (0000)
  • In-situ diagnostics of the atomic layer deposition process using FT-IR and residual gas analysis system, 제 2회 반도체공정 진단 Workshop, 0, 0, 119- (0000)
  • A Study on the atomic layer deposited Tantalum carbo nitride films using TBTDET and hydrogen, 제 35회 한국진공학회 하계 정기학술대회 초록집, 0, 0, - (0000)
  • FT-IR을 이용한 TaCN 박막의 원자층 기상증착공정(Atomic vapor deposition) 진단 및 반응 메커니즘 연구, 제 35회 한국진공학회 하계 정기학술대회 초록집, 0, 0, - (0000)
  • R.F. 스퍼터링을 이용한 CuxN 박막의 증착 및 펜타센 반도체 소자에서의 소스/드레인 전극 특성 분석, 제 35회 한국진공학회 하계 정기학술대회 초록집, 0, 0, - (0000)
  • Atomic Vapor Deposited Tantalum Carbo-Nitride Film using TBTDET and Hydrogen, ECS transactions, 0, 0, 355- (0000)
  • Characteristics of Tantalum Carbo-nitride Thin Films Deposited with Atomic Layer Deposition Process, ECS transactions, 0, 0, 227- (0000)
  • (hfac)Cu(DMB)를 이용한 구리박막의 유기금속 화학증착"", 한국재료학회눈문개요집, 0, 0, - (0000)
  • 구리 박막의 저온 유기금속 화학증착, 화학공학의 이론과 응용, 0, 0, - (0000)
  • 액체직접주입방식의 MOCVD공정에 의한 Bi4-xNdxTi3O12 박막의 증착 및 평가, 국가지정연구실(NRL) 반도체 기술교류회 워크샵, 0, 0, - (0000)
  • Annealing effect of Molybdenum(Mo) electrode on improving interface properties between Mo and pentacene, 2007년도 한국 재료 학회 추계 학술 발표대회, 0, 0, - (0000)
  • Characteristics of tantalum carbo-nitride thin films deposited with atomic layer deposition and atomic vapor deposition process, ALD 2008, 0, 0, - (0000)
  • Chloride 화합물과 Alkoxide 화합물을 이용한 Zr silicate 박막의 원자층 화학증착, 2002년도 한국재료학회 초록집, 0, 0, - (0000)
  • Contact resistance of metal/organic semiconductor and capacitance-voltage characteristics of metal/polymer insulator/Si structure, International Symposium on Display Materials and Processes, 0, 0, - (0000)
  • DLI-MOCVD를 이용한 La2O3 박막의 증착과 전구체 평가, 한국재료학회 초록집, 0, 0, - (0000)
  • Effect of In Situ H2 Plasma Pretreatment on the Low Temperature Microcrystalline Silicon Film Deposited on Amorphous on Amorphous SiO2 and SiNx:H Surfaces, Proc. of the 14th Int. Conf. on CVD and EUROCVD-11, 0, 0, - (0000)
  • Effects of Ti precursors on BST thin films deposited by MOCVD, 제7회 반도체 학술대회논문집, 0, 0, - (0000)
  • Improvement of interfacial properties between pentacene and silicon dioxide by self-assembled monolayers, 제 14회 한국반도체 학술 대회, 0, 0, - (0000)
  • In-Situ Diagnosis using FT-IR and the Characterization of Hf Nitride Films, AVS 53rd Internation Symposium, 0, 0, - (0000)
  • Interface engineering in organic device, 지역연구개발 클러스터사업팀 3세부과제 정보통신용 유기겔 신소재 개발"", 0, 0, - (0000)
  • Reduction of Contact Resistance between Indium-Tin Oxide and Pentacene by Surface Treatments, 제 14회 한국반도체 학술 대회, 0, 0, - (0000)
  • Remote plasma enhanced metal organic chemical vapor deposition of TiN for diffusion barrier, Proc. of 2nd Korean-Japan Symposium on Adv. Mater, 0, 0, - (0000)
  • Resistance Switching Properties of Cu2O Thin Film, 제 14회 한국반도체 학술 대회, 0, 0, - (0000)

학회발표

  • Optical band-gap tuning of carbon nanodots for multi-color generation, ., 0, 0, - (2015)
  • Tuning Energy Gaps of Graphene Quantum Dots via Edge Functionalization and Their Application to Light-Emitting Diodes, ., 0, 0, - (2015)
  • π-conjugated Ligand Modification of Carbon Nanodots for Color Tuning, ., 0, 0, - (2015)
  • Optical band-gap tuning of carbon nanodots for multi-color generation, ., 0, 0, - (2014)
  • Carbonaceous Materials to Replace Pt for Counter Electrodes in Dye-sensitized Solar Cells, ., 0, 0, - (2013)
  • Freestanding Luminescent Films of Carbon Nanodots for Large-scale Phosphor-based White Light-emitting Devices, ., 0, 0, - (2013)
  • How to Be Successful in Metal Nitride ALCVD, ., 0, 0, - (2013)
  • Luminescent carbon nanodots for broad-band visible light genertion, ., 0, 0, - (2013)
  • Freestanding luminescent films of nitrogen-rich carbon nanodots towards large-scale phosphor-based white light-emitting devices, ., 0, 0, - (2013)
  • Luminescent Carbon Nanodots for Lighting, ., 0, 0, - (2013)
  • Carbon black and PEDOT:PSS composite materials for counter electrodes in dye-sensitized solar cells, ., 0, 0, - (2013)
  • Freestanding Luminescent Films of Nitrogen-rich Carbon Nanodots Towards Large-scale Phosphor-based White Light-emitting Devices, ., 0, 0, - (2013)
  • Freestanding Luminescent Films of Carbon Nanodots Towards Large-Scale Phosphor-Based White Light-Emitting Devices, ., 0, 0, - (2013)
  • Bifunctional PEDOT:PSS/carbon black composite as an electron injector into iodide redox couple for TCO-free dye-sensitized solar cells, ., 0, 0, - (2013)
  • Luminescent Carbon Nanodots: A New Era in Graphitic Carbon Nanomaterials, ., 0, 0, - (2013)
  • Size-tunable Synthesis of Highly Luminescent Carbon Quantum Dots in Reverse Micelles and Their Optoelectronic Properties, ., 0, 0, - (2012)
  • Effect of deposition temperature on metal-insulator-metal capacitors fabricated using a mixed alkylamido-cyclopentadienyl zirconium precursor, ., 0, 0, - (2012)
  • PEDOT:PSS/carbon black composite as an electron injector into iodide redox couple for TCO-free dye-sensitized solar cells, ., 0, 0, - (2012)
  • Facile formation of nearly monodisperse, highly luminescent graphene quantum dots via emulsion-templated carbonization of carbohydrates, ., 0, 0, - (2012)
  • High performance quasi-solid-state dye -sensitized solar cells with a light trapping polymer gel electrolyte, ., 0, 0, - (2011)
  • Light scattering submicron TiO2 particles incorporated in an amphiphilic polymer gel electrolyte for high performance quasi -soid-state dye -sensitized solar cells, ., 0, 0, - (2011)
  • Optimization of PEDOT: PSS and carbon black composite as a TCO free counter electrode in dye sensitized solar cells, ., 0, 0, - (2011)
  • Hyteresis-free Organic Field-effect Transistors and Metal –insulator -semiconductor Capacitors Enabled by a Low -temperature Self-curable Polyacrylate Copolymer Gate Insulator, ., 0, 0, - (2011)
  • Flexible Carbon -Nanofiber counter electrode for Quasi -solid state dye sensitized solar cell, ., 0, 0, - (2011)
  • Syneresis reduction for stable quasi-solid -state dye-sensitized solar cells based on a novel low -crystalline amphiphilic polymer gel electrolyte, ., 0, 0, - (2011)
  • Flexible Organic Transistors Functioned at low voltage with low temperature cross-linked High-k polymer Cyanoethyled Pullulan as a Gate Insulator on Stainless steel substrates, ., 0, 0, - (2010)
  • Application of PEDOT:PSS and Carbon black composite as TCO free counter electrode in dye sensitized solar cells, ., 0, 0, - (2010)
  • The MWNT/PEDOT:PSS composite with high conductivity, catalytic activity and work function and application of it as electrodes of organic thin film transistor and dye sensitized solar cell, ., 0, 0, - (2010)
  • Flexible polymer substrates for carbon-nanofiber counter electrode catalyst on dye-sensitized solar cells, ., 0, 0, - (2010)
  • High performance pentacene field-effect transistors by using CEP/Al2O3 bilayer gate insulator, ., 0, 0, - (2010)
  • PEDOT:PSS and Carbon Black composite catalyst on TCO free counter electrode in dye sensitized solar cells, ., 0, 0, - (2010)
  • Carbon Nano Fiber on flexible polymer substrates as a counter electrode for efficient dye sensitized solar cell, ., 0, 0, - (2010)
  • Submicron size graphite as a counter electrode electrocatalyst for highly efficient dye sensitized solar cells, ., 0, 0, - (2010)
  • Application of stainless steel as counter electrode in dye sensitized solar cells, ., 0, 0, - (2010)
  • Effect of MWNT/PEDOT:PSS composition on conductive film properties, ., 0, 0, - (2010)
  • PE(plasma enhanced) ALD and thermal ALD of TaCxNy films with TBTDET(tert-butylimido tris-diethylamido tantalum) and H2/NH3, ., 0, 0, - (2010)
  • Plasma enhanced atomic layer deposition of TaCxNy thin film with TBTDET and methane/hydrogen gas for NMOSFET gate electrode, ., 0, 0, - (2010)
  • The surface of galvanized iron and magnesium modified with self-assembled monolayer, and their applications, ., 0, 0, - (2010)
  • Fabrication of Dye Sensitized Solar Cells with Stainless steel as counter electrode, ., 0, 0, - (2010)
  • Improving corrosion resistance by forming self-assembled monolayers of octadecyltrichlorosilane(OTS) on Galvanized Iron and Magnesium in short time, ., 0, 0, - (2009)
  • Improved Performance in Dye Sensitized Solar Cells Employing Alumina Modified TiO2 Photoelectrodes, ., 0, 0, - (2009)
  • High Performance Graphite Counter Electrode for Dye Sensitized Solar Cells, ., 0, 0, - (2009)
  • Chemical vapor deposition of TaCxNy films using tert-butylimido tris-diethylamido tantalum (TBTDET): reaction mechanism and film charateristics, ., 0, 0, - (2009)
  • Hysteresis-free organic field-effect transistors with a high dielectric strength cross-linked polyacrylate copolymer gate insulator, ., 0, 0, - (2009)
  • Atomic Layer Deposition of Thin Al2O3 Barrier Layers for Efficient Dye Sensitized Solar Cells, ., 0, 0, - (2009)
  • Al2O3 coated TiO2 Electrodes for Efficient Dye Sensitized Solar Cells, ., 0, 0, - (2009)
  • Al2O3 coated TiO2 Electrodes for Efficient Dye Sensitized Solar Cells, ., 0, 0, - (2009)
  • Atomic layer chemical vapor deposition for silicon nano devices, 화학공학회 춘계 초록집, 0, 0, - (2009)
  • ALD of TaCxNy for gate metal applications., THE 5TH 2009 KOREAN ALD WORKSHOP, 0, 0, - (2009)
  • 구리금속 배선을 위한 유기금속화학증착 공정 및 화학전구체 현황, , 0, 0, - (1999)
  • CHEMICAL VAPOR DEPOSITION OF BARIUM STRONTIUM TITANATE THIN FILMS USING DIRECT LIQUID INJECTION OF A MIXTURE SOLUTION, First Asian conference on Chemical Vapor Deposition, 0, 0, - (1999)
  • METAL ORGANIC CHEMICAL VAPOR DEPOSITION OF COPPER THIN FILMS FROM (hfac)Cu(VCH) AND (hfac)Cu(4MP), First Asian conference on Chemical Vapor Deposition, 0, 0, - (1999)
  • 구리박막의 유기금속 화학증착을 위한 구리(I)전구체, , 0, 0, - (1998)
  • Fluorinated silicon nitride film deposited at low temperatures from SiH4-SiF4-NH3, Materials Research Society, 0, 0, - (1998)
  • Cu MOCVD 공정에서 전구체들의 기상반응 메카니즘과 증착 속도에 관한 연구, 제12회 한국진공학회 학술발표회, 0, 0, 86- (1997)
  • PECVD 증착 변수와 in-situ IR cell을 이용한 온도별 a-Si:H의 특성 변화, 제12회 한국진공학회 학술발표회, 0, 0, 66- (1997)
  • Study on thermal decomposition of TiN precursors for metal organic chemical vapor deposition, 제4회 한국 반도체 학술대회 논문집, 0, 0, 411- (1997)
  • 유기금속 화학증착에서 구리전구체들의 기상분해반응 메카니즘과 증착속도에 관한 연구, , 0, 0, - (1996)
  • Deposition of Silicon Films at Low Temperature with Remote Plasma Enhanced Chemical Vapor Deposition, , 0, 0, - (1996)
  • DMEAA를 이용한 알루미늄 유기금속 화학증착 공정에서의 기상반응 메카니즘 연구, , 0, 0, - (1996)
  • TDEAT를 이용한 TiN 유기금속 화학증착에서 수소와 질소 플라즈마 효과, , 0, 0, - (1996)
  • TEOS/O3을 이용한 게이트 산화막의 저온 화학증착, , 0, 0, - (1996)
  • The Effect of Temperature on the Growth Rate and Microstructure of Aluminum Thin films Deposited by Chemical Vapor Deposition from Dimethylethylamine Alane, , 0, 0, - (1996)
  • ALCVD를 이용한 Zirconium Silicate 박막의 증착, 반도체 학술대회 초록집(p413), 0, 0, - (0000)
  • DLI-MOCVD를 이용한 Bi4-xLaxTi3O12 박막의 증착과 전구체 평가, 반도체 학술대회 초록집(p615), 0, 0, - (0000)
  • Nano-composite Dual Phase Low-k SiCOH/CxHy Films by Plasma Chemical Vapor Deposition with VTMS(vinyltrimethylsilane), 반도체 학술대회 초록집(p511), 0, 0, - (0000)
  • Atomic Layer Deposition of Zirconium Silicate Films Using Chloride and Alkoxide Compounds, Proc. of AVS Topical Conference(ALD 2002), 0, 0, - (0000)
  • Atomic Layer Deposition of Zirconium Silicate Films Using Zirconium Tetrachloride and Tetra-n-butyl Orthosilicate, AVS 49th International Symposium(thin film session), 0, 0, - (0000)
  • Atomic Layer Deposition of ZrO2 Using A New Zr Precursor and Water, 제 10회 한국반도체 학술대회 초록집, 0, 0, 549- (0000)
  • Nano-composite Low-k SiCOH Films by Plasma Enhanced Chemical Vapor Deposition with VTMS (vinyltrimethylsilane), 제 10회 한국반도체 학술대회 초록집, 0, 0, 701- (0000)
  • NDRO-FRAM의 구현을 위한 Bi3.2La0.8Ti3O12/buffer layer (La2O3 와 Zr silicate)/Si 구조의 특성 평가, 제 10회 한국반도체 학술대회 초록집, 0, 0, 163- (0000)
  • Atomic layer chemical vapor deposition (ALCVD) of hafnium silicate films for nano CMOS gate dielectric applications, Korea-Japan Symposium on Materials (O-1), 0, 0, - (0000)
  • Investigations of conduction mechanisms of organic molecules used as buffer hole injecting layer in OLEDs, International Meeting on Information Display, 0, 0, - (0000)
  • New Phosporescent Cyclometalated Iridium(III) Complexes with Diphenyl-1,3-oxazolic and 2-(30Thienyl)pyridine Ligands for LED Applications, 2003 International Meeting in Information Display, 0, 0, - (0000)
  • Structural Morphology and Dielectric Properties of Polyaniline-emeraldine Base and Poly Methyl Methacrylate Thin Films Prepared by Spin Coating Method, International Meeting on Information Display, 0, 0, - (0000)
  • Atomic layer deposition of hafnium silicate films using dichlorobis[bis(trimethylsilyl)amido]hafnium and water, Atomic Layer Deposition (ALD 2003), 0, 0, - (0000)
  • Capacitance-Voltave, TSDC, Pyroelectric and Surface Morphology of PMMA Thin Films Prepared by Isothermal Immersion, Korea-Japan Joint Forum 2003, 0, 0, - (0000)
  • Growth of Hafnium Aluminate Thin Films by Direct Liquid Injection Metal Organic Vapor Deposition Using Hf(N(C2H5)4 and Al(OiC3H7)3, 제11회 반도체 학술대회 초록집, 0, 0, 333- (0000)
  • Overview of atomic layer chemical vapor deposition (ALCVD) -Hafnium silicate high-k gate dielectric for next generation nano devices, 6th Japan - Korea Symposium on Materials & Interfaces, 0, 0, - (0000)
  • Dielectric property of CR-S thin films prepared by spin coating, 2004년 화학공학회/공업화학회 공동 학술대회, 0, 0, - (0000)
  • Low-k SiCOH Films by Plasma Enhanced Chemical Vapor Deposition using Divinyldimethylsilane, 2004년 화학공학회/공업화학회 공동 학술대회, 0, 0, - (0000)
  • Tetrakis-diethylamido hafnium, trimethyl aluminium 그리고 water을 이용한 hafnia-alumina nano laminate 박막의 원자층 화학증착, 2004년 화학공학회/공업화학회 공동 학술대회, 0, 0, - (0000)
  • Tris(2,2,6,6-tetramethyl-3,5-heptanedionato) neodymium을 이용한 Nd oxide 박막의 액체직접주입방식(DLI) 유기금속화학증착, 한국재료학회, 0, 0, - (0000)
  • Atomic layer chemical vapor deposition (ALCVD) of Hafnium silicate high-k gate dielectric using a single precursor HfCl2[N{Si(CH3)3}2]2, , 0, 0, - (0000)
  • Chemical Vapor Deposition of Bi4-xNdxTi3O12 Films Using a Direct Liquid Injection of Precursor Solutions, 제 14회 유전체물성 심포지움 및 제 6회 강유전체 소자/소재 워크샵, 0, 0, - (0000)
  • Structure and Electrical Properties of Bi4-xNdxTi3O12 Thin Films Deposited by Metalorganic Chemical Vapor Deposition, 제 14회 유전체물성 심포지움 및 제 6회 강유전체 소자/소재 워크샵, 0, 0, - (0000)
  • Characterization of rare earth oxide thin films (Re2O3:Re=La and Nd) depositied by chemical vapor deposition using tmhd based metal organic sources, 제12회 한국 반도체 학술대회 초록집(p171), 0, 0, - (0000)
  • Organic insulators and molecular layers for organic thin film transistor, 한국화학공학회 춘계 학술대회, 0, 0, - (0000)
  • Atomic layer deposition of hafnia alumina nano laminate thin films, The 4th Asia-Pacific chemical reaction engineering symposium, 0, 0, - (0000)
  • Atomic layer deposition of hafnium silicate thin films using a novel single precursor, The 4th Asia-Pacific chemical reaction engineering symposium, 0, 0, - (0000)
  • Deposition of Bi4-xNdxT3O12 films by liquid injection metal organic chemical vapor deposition, The 4th Asia-Pacific chemical reaction engineering symposium, 0, 0, - (0000)
  • Hafnium silicate nanolaminate high-k gate dielectric deposited by atomic vapor deposition (ALD), The 4th Asia-Pacific chemical reaction engineering symposium, 0, 0, - (0000)
  • Atomic layer chemical vapor deposition (ALCVD) of Hafnium silicate high-k gate dielectric for next generation nano devices, AVS 5th International Conference on Atomic Layer Deposition, 0, 0, - (0000)
  • In-situ Diagnostics of ALD Hafnium Silicate Nanolaminate Deposition using TEMAH, tris-DMAS and Water, AVS 5th International Conference on Atomic Layer Deposition, 0, 0, - (0000)
  • In-situ FT-IR Diagnostics of Atomic Layer Deposition Process, The 3rd symposium on nano chemical processing, 0, 0, - (0000)
  • Atomic layer chemical vapor deposition (ALCVD) of hafnium silicate films using HfCl4 and Si(n-OC4H9)4, Atomic Layer Deposition (ALD 2003), 0, 0, - (0000)
  • Properties of poly[vinylidene fluoride-trifluoroethylene] 50/50 copolymer and poly vinyl phenol for polymer gate dielectric thin films prepared by spin coating, Korea-Japan joint forum 2005, 0, 0, - (0000)
  • Contact resistance of metal/organic semiconductor and capacitance-voltage characteristics of metal/polymer insulator/Si structure, 한국화학공학회, International Symposium on Display Materials and Processes, 0, 0, - (0000)
  • In-Situ Diagnosis using FT-IR and the Characterization of Hf Nitride Films, AVS 53rd Internation Symposium & Exhibition, 0, 0, - (0000)
  • Improvement of interfacial properties between pentacene and silicon dioxide by self-assembled monolayers, 제 14회 한국반도체 학술 대회, 0, 0, - (0000)
  • Resistance Switching Properties of Cu2O Thin Film, 제 14회 한국반도체 학술 대회, 0, 0, - (0000)
  • Synchrotron X-ray Scattering Study on the Initial Growth of Atomic Layer Deposition Thin Films for the Next Generation MOSFET, Electroceramics XI, 0, 0, - (0000)
  • Performance of the pentacene thin film transistor with NiOx film as a source/drain electrode, 8th Japan-Korea Symposium on Materials and Interfaces, 0, 0, - (0000)
  • Performance of the pentacene TFT with conductive NiOx source/drain electrode, Proceedings of the 10th Cross Straits Symposium on Materials, Energy and Enviromental Sciences, 0, 0, - (0000)
  • Performance of the Pentacene TFT with Conductive NiOx Source/Drain Electrode, IUMRS-ICA 2008, 0, 0, - (0000)
  • Atomic Layer Deposition of TaC gate electrode with TBTDET, 2009년도 한국재료학회 춘계학술발표대회 및 제16회 신소재 심포지엄, 0, 0, - (0000)
  • Deposition of Aluminum doped ZnO(AZO) film on PEN (polyethylen naphthalate), 2009년도 한국재료학회 춘계학술발표대회 및 제16회 신소재 심포지엄, 0, 0, - (0000)
  • In-situ synchrotron X-ray scattering study on the initial structure of Ru-metal Atomic Layer Deposition films for the electronic devices, 2009 MRS SPRING MEETING, 0, 0, - (0000)
  • In-situ synchrotron X-ray scattering study on the initial structure of Ta(C)N Atomic Layer Deposition films for the electronic devices, KJCFE07, 0, 0, - (0000)

단행본

  • 소자재료 공정개론, 카오스북, 389, 이시우 (2014)
  • 재료과학과 공학, 교보문고, , 이시우 (2010)
  • CVD Handbook, 반도출판사, 858, 이시우 (1993)

연구실적

  • 제2회 ASIAN CVC CONFERENCE 개최비, 포항공과대학교 (2001-2001)
  • 제2회 아시아 CVD 심포지움, 한국과학기술원 (2001-2001)
  • ALD HIGH-K GATE DIELECTRIC용 SOURCE 개발, [삭제]삼성전자(주)기흥공장 (2001-2002)
  • ALD HIGH-K GATE DIELECTRIC 용 SOURCE 개발, [삭제]삼성전자(주)기흥공장 (2002-2003)
  • CU CVD 박막과 LOW-K막 개발, (주)하이닉스반도체 (2000-2001)
  • LOW TEMPERATURE DEPOSITION OF MOCVD PZT, 삼성전자(주) (2001-2002)
  • CU CVD 박막과 LOW-K 절연막 개발, (주)하이닉스반도체 (2001-2002)
  • CU CVD 박막과 LOW-K 절연막 개발, (주)하이닉스반도체 (2002-2003)
  • PRECURSOR/DLI PROCESS평가, 한양대학교 (2001-2002)
  • PRECURSOR/DLI PROCESS 평가 (5년차), 한양대학교 (2002-2003)
  • 고체재료 합성용 화학전구체 은행, 한양대학교 (2000-2001)
  • CU SEED용 CU MO(METAL ORGANIC)PRECURSOR개발, 한양대학교 (2000-2001)
  • 고체재료 합성용 화학전구체 은행, 한양대학교 (2001-2002)
  • 2001 고체재료 합성용 화학전구체은행 자체대응과제, 한양대학교 (2001-2002)
  • 2002 고체재료 합성용 화학전구체은행 (3년차), 한양대학교 (2002-2003)
  • 나노구조 형성관련 화학 전구체의 개발 및 평가, 한양대학교 (2000-2001)
  • DRO FRAM용 CAPACITOR 기술개발, 한양대학교 (2000-2001)
  • PRECURSOR/DLI PROCESS 평가, 한양대학교 (2000-2001)
  • DRO FRAM용 CAPACITOR기술 개발(1NO01297로 재원 변경으로인한 과제번호, 한양대학교 (2001-2002)
  • 단원자층 증착 기술개발, 한양대학교 (2001-2002)
  • DRO FRAM용 CAPACITOR 기술 개발, 한양대학교 (2001-2002)
  • 단원자층 증착 기술개발, 한양대학교 (2002-2003)
  • TI 전구체 및 합성방법, 포항공과대학교 (1999-2004)
  • 구리의 화학증착에 유용한 유기 구리 전구체에 관한 기술, 포항공과대학교 (2000-2004)
  • 유기반도체 소자 관련 소재, 물성, 박막 증착 공정개발, [삭제]삼성전자(주)기흥공장 (2004-2005)
  • 차세대 고용량 강유전체 메모리(FERAM)을 위한 MOCVD BLT캐패시커의 공정개발 및, (주)하이닉스반도체 (2003-2004)
  • 차세대 고유전율 게이트 절연막 개발을 위한 소스 개발, [삭제]삼성전자(주)기흥공장 (2003-2004)
  • 차세대 고용량 강유전체 메모리(FERAM)을 위한 MOCVD BLT 캐패시터의 공정개발 및, (주)하이닉스반도체 (2004-2005)
  • 차세대 고유전율 게이트 절연막 개발을 위한 소스 개발, [삭제]삼성전자(주)기흥공장 (2004-2005)
  • 고체재료합성용화학전구체은행, 한국과학재단 (2003-2004)
  • 고체재료합성용 화학전구체은행, 한국과학재단 (2004-2005)
  • 정보통신용 유기겔 신소재 개발, 영남대학교산학협력단 (2004-2005)
  • 차세대 비휘발성 나노메모리 소재공정기술 개발, 한국과학재단 (2005-2006)
  • 개인장비 운영경비 적립액, 포항공과대학교 (2003-2018)
  • ALD 학회 개최에 따른 산업체 콘소시엄 구성, 포항공과대학교 (2006-2008)
  • 고체시료 합성용 화학전구체 소재은행 (이용물질 수익금 계정), (주)세미텔 (2000-2006)
  • 유기반도체 소자관련 소재, 물성, 박막공정 개발, [삭제]삼성전자(주)기흥공장 (2005-2006)
  • 인건비풀링과제, 포항공과대학교 (2006-2015)
  • 자체연구개발과제, 포항공과대학교 (2006-2016)
  • 차세대 고유전율 게이트 절연막 개발을 위한 소스 개발, [삭제]삼성전자(주)기흥공장 (2005-2006)
  • 정보통신용 유기겔 신소재 개발, 영남대학교산학협력단 (2005-2006)
  • 차세대 고유전율 게이트 절연막 개발을 위한 소스 개발, [삭제]삼성전자(주)기흥공장 (2006-2007)
  • 정보통신용 유기겔 신소재 개발, 영남대학교산학협력단 (2006-2007)
  • 5NA05077 이월과제(02는 5NA06633302과제로 편성되었음), 영남대학교산학협력단 (2006-2007)
  • 5NA05077 이월과제(정보통신용 유기겔 신소재 개발(영남대 김동호-기업체)), 영남대학교산학협력단 (2006-2008)
  • 차세대 비휘발성 나노메모리 소재․공정기술 개발, 한국과학기술원 (2006-2007)
  • 5NS05006 이월과제, 한국과학재단 (2006-2007)
  • 유기반도체 소자관련 소재, 물성, 박막 공정개발, [삭제]삼성전자(주)기흥공장 (2006-2007)
  • 차세대 비휘발성 나노메모리 소재.공정기술 개발, 한국과학재단 (2007-2008)
  • 1NO04094(2.3598)이월과제(2.4203잔액정리과제에 포함), 영남대학교산학협력단 (2006-2007)
  • 정보통신용 겔 신소재 개발, 영남대학교산학협력단 (2007-2008)
  • 차세대 트랜지스터 GATE STACK 용 박막의 원자층 증착과 물성, 소자 특성 연구, (주)하이닉스반도체 (2007-2008)
  • 차세대 플렉시블 전자소자용 유기겔 기판 개발, 웅진케미칼(주) (2007-2008)
  • 유기반도체 소자 관련 소재, 물성, 박막 공정개발, 삼성전자(주) (2007-2008)
  • 차세대 비휘발성 나노메모리 소재․공정기술 개발, 한국과학재단 (2008-2009)
  • 스테인레스 스틸 표면에 자기조립 분자막의 형성 메커니즘 연구, 포항공과대학교 (2008-2008)
  • 나노팹기술을 이용한 에너지용 철강재료 개발, 포항공과대학교 산학협력단 (2008-2009)
  • [STSC](전사)금속 표면에 최적 단분자막 형성방법 기초연구, (주)포스코 (2008-2009)
  • 정보통신용 절연성 유기겔 신소재 개발, 영남대학교산학협력단 (2008-2009)
  • 차세대 트랜지스터 GATE STACK 용 박막의 원자층 증착과 물성, 소자 특성 연구, (주)하이닉스반도체 (2008-2009)
  • 차세대 플렉시블 전자소자용 유기겔 기판 개발, 웅진케미칼(주) (2008-2009)
  • 4.1953(지방기술혁신_이시우) 이월과제, 영남대학교산학협력단 (2008-2009)
  • 차세대 비휘발성 나노메모리 소재․공정기술 개발, 한국과학재단 (2009-2010)
  • (학생)인건비풀링과제, 포항공대산학협력단 (2009-2020)
  • 염료 감응형 태양전지 핵심기술개발, 포항공대산학협력단 (2009-2010)
  • 차세대 트랜지스터 GATE STACK 용 박막의 원자층 증착과 물성, 소자 특성 연구, (주)하이닉스반도체 (2009-2010)
  • 정보통신용 겔 신소재 개발, 영남대학교산학협력단 (2009-2010)
  • [STSC](전사)금속 표면에 최적 단분자막 형성방법 기초연구, (주)포스코 (2009-2010)
  • 나노하이브리드 잉크제조 및 습식 TFT 공정 개발, 한국전기연구원 (2010-2010)
  • 광전변환소자 관련 소재와 계면 연구, 재단법인한국연구재단 (2010-2011)
  • 차세대 트랜지스터 GATE STACK 용 박막의 원자층 증착과 물성, 소자 특성 연구, (주)하이닉스반도체 (2010-2011)
  • 염료 감응형 태양전지 핵심 기술 개발, 포항공대산학협력단 (2010-2011)
  • 정보통신용 겔 응용제품 개발 (제4세부), 영남대학교산학협력단 (2010-2011)
  • 광전변환 소자 관련 소재와 계면 연구, 재단법인한국연구재단 (2011-2012)
  • 차세대 MOSFET의 게이트 전극을 위한 원자층화학증착 공정연구 및 전극 특성평가, 삼성전자(주) (2011-2012)
  • 4.5417_1차년도 이월과제, 재단법인한국연구재단 (2011-2012)
  • 다야한 형태의 탄소재료를 이요한 염료 감응형 태양전지의 촉매전극 제작 및 촉매황동 매커니즘 규명 연구, 포항공대산학협력단 (2011-2012)
  • 정보통신용 겔 신소재 개발 (제4세부), 영남대학교산학협력단 (2011-2012)
  • 광 흡수 대역 조절이 가능한 탄소 양자점 합성법 개발, 포항공대산학협력단 (2011-2012)
  • 광전변환소자 관련 소재와 계면 연구, 재단법인한국연구재단 (2012-2013)
  • 차세대 MOSFET의 게이트 전극을 위한 원자층화학증착 공정연구 및 전극 특성평가, 삼성전자(주) (2012-2013)
  • 4.6697/7169_2차년도 이월과제, 재단법인한국연구재단 (2012-2013)
  • 정보통신용 겔 응용제품 개발(4세부), 영남대학교산학협력단 (2012-2013)
  • 학부생프로그램-박윤상(화공)-인(P) 도핑된 고발광성 탄소 양자점(CQDS) 합성 및 특성 분석, 포항공과대학교 (2012-2013)
  • 4.7594 이월과제, 영남대학교산학협력단 (2012-2013)
  • 광전변환소자 관련 소재와 계면 연구, 재단법인한국연구재단 (2013-2014)
  • 탄소 양자점 소재 합성, 포항공대산학협력단 (2013-2014)
  • (이진규-화공)탄소 양자점을 이용한 유기박막 태양전지 제작 및 특성 분석, 포항공과대학교 (2013-2013)
  • 시험분석 개별관리운영비과제, 포항공과대학교 (2013-2018)
  • SPRC4차년도_차세대 전자 소자를 위한 원자층 화학 증착 공정 연구 및 전극/절연막 특성 평가, 삼성전자(주) (2013-2014)
  • 3D NAND 소자에 있어서 CVD 막질 특성에 대한 연구, 에스케이하이닉스 주식회사 (2013-2016)
  • 광전변환소자 관련 소재와 계면 연구, 재단법인한국연구재단 (2014-2015)
  • 탄소 양자점 발색단의 화학적 조절과 발색 기작 연구(1차년도), 재단법인 삼성미래기술육성재단 (2014-2015)
  • 4.9733_2단계 1차년도 이월과제, 재단법인한국연구재단 (2014-2015)
  • 시험분석 개별관리운영비, 포항공과대학교 (2015-2018)
  • 개인장비 운영경비, 포항공과대학교 (2015-2019)
  • 이월과제_4.11060, 재단법인 삼성미래기술육성재단 (2015-2015)
  • 탄소 양자점 발색단의 화학적 조절과 발색 기작 연구, 재단법인 삼성미래기술육성재단 (2015-2015)
  • 연구개발과제[2015년 신설], 포항공과대학교 (2015-2017)

IP

  • 이시우,권우성, 에멀젼을 이용한 탄소 양자점의 제조 방법, USA, 14/307,774 (2014)
  • 이시우,권우성, 유기 용매에 녹고 크기 조절이 가능한 그래핀 양자점의 대량 제조 방법, 한국, 10-2014-0052781 (2014)
  • 이시우,권우성, 유기 용매에 녹고 크기 조절이 가능한 그래핀 양자점의 대량 제조 방법, 한국, 10-2014-0052781 (2014)
  • 이시우,도성안,권우성, 에멀젼을 이용한 탄소 양자점의 제조 방법, 한국, 10-2014-0073099 (2013)
  • 이시우,도성안,권우성, 에멀젼을 이용한 탄소 양자점의 제조 방법, 한국, 10-2014-0073099 (2013)
  • 이시우,권우성, 에멀젼을 이용한 탄소 양자점 제조 방법, 한국, 10-2013-0068946 (2013)
  • 이시우,권우성, 에멀젼을 이용한 탄소 양자점 제조 방법, 한국, 10-2013-0068946 (2013)
  • 이시우,김정민,이재륭,박영준, 우수한 촉매활성도와 전기전도도를 갖는 염료 감응형 태양전지용 전도성 고분자-탄소 복합체 전극과 이를 이용한 염료 감응형 태양전지 및 이들의 제조방법, 한국, 10-2013-0049631 (2013)
  • 이시우,김정민,이재륭,박영준, 우수한 촉매활성도와 전기전도도를 갖는 염료 감응형 태양전지용 전도성 고분자-탄소 복합체 전극과 이를 이용한 염료 감응형 태양전지 및 이들의 제조방법, 한국, 10-2013-0049631 (2013)
  • 이시우,김정민, 카본블랙 전극을 이용한 염료감응형 태양전지 및 이의 제조방법, 한국, 10-2012-0068650 (2012)
  • 이시우,권우성, 균일한 크기를 가지는 탄소 양자점 제조 방법, 한국, 10-2012-0062170 (2012)
  • 이시우,권우성, 균일한 크기를 가지는 탄소 양자점 제조 방법, 한국, 10-2012-0062170 (2012)
  • 이시우,임상훈, 염료 감응형 태양 전지의 제조 방법, 한국, 10-2011-0036824 (2011)
  • 이시우,임상훈, 염료 감응형 태양 전지의 제조 방법, 한국, 10-2011-0036824 (2011)
  • 이시우,임상훈,정용균,김종상, 전처리를 포함하는 자기 조립 분자막 형성에 의한 금속표면처리방법, 한국, 10-2010-0123002 (2010)
  • 이시우,임상훈,정용균,김종상, 전처리를 포함하는 자기 조립 분자막 형성에 의한 금속표면처리방법, 한국, 10-2010-0123002 (2010)
  • 이시우,문수산나, 직접 액체 주입형 화학 기상 증착법을 이용한 투명도전막의 제조방법 및 이에 의해 제조된 투명도전막, 한국, 10-2010-0089569 (2010)
  • 이시우,문수산나, 직접 액체 주입형 화학 기상 증착법을 이용한 투명도전막의 제조방법 및 이에 의해 제조된 투명도전막, 한국, 10-2010-0089569 (2010)
  • 이시우,임상훈, 염료 감응형 태양전지용 기판의 염료 흡착 방법 및 이를 이용한 태양전지, 한국, 10-2010-0122999 (2010)
  • 이시우,임상훈, 염료 감응형 태양전지용 기판의 염료 흡착 방법 및 이를 이용한 태양전지, 한국, 10-2010-0122999 (2010)
  • 이시우,임상훈,정용균,이재륭, 자기 조립 분자막을 이용한 금속 표면 처리 방법, 상기 방법에 의해 표면 처리된 강판 및 상기 방법에 사용되는 금속 표면 처리용액, 한국, 10-2009-0131435 (2009)
  • 이시우,임상훈,정용균,이재륭, 자기 조립 분자막을 이용한 금속 표면 처리 방법, 상기 방법에 의해 표면 처리된 강판 및 상기 방법에 사용되는 금속 표면 처리용액, 한국, 10-2009-0131435 (2009)
  • 이시우,라혜민,GanapathyVeerappan,BojanKarunagaran, 코어-쉘 구조의 금속 산화물을 구비한 염료 감응 태양전지 및 그 제조 방법, 한국, 10-2009-0108703 (2009)
  • 이시우,라혜민,GanapathyVeerappan,BojanKarunagaran, 코어-쉘 구조의 금속 산화물을 구비한 염료 감응 태양전지 및 그 제조 방법, 한국, 10-2009-0108703 (2009)
  • 이시우,윤동진, 유기 박막 트랜지스터 표시판 및 그 제조 방법, USA, 12/391,883 (2009)
  • 이시우,XuWentao, 고분자게이트 절연막의 제조방법, 한국, 10-2009-0056438 (2009)
  • 이시우,XuWentao, 고분자게이트 절연막의 제조방법, 한국, 10-2009-0056438 (2009)
  • 이시우,조기희, 원자층 화학증착을 이용한 탄탈륨 카바이드 박막의 제조방법, 한국, 10-2009-0045319 (2009)
  • 이시우,윤동진, 유기 박막 트랜지스터 표시판 및 그 제조 방법, 한국, 10-2008-0086897 (2008)
  • 이시우, 반도체 소자의 알루미늄박막형성방법, 한국, 10-1997-0028157 (1992)
  • 이시우,윤종호, 화학증착에 의한 개구 충전 방법, 한국, 10-1997-0040890 (1992)
  • 이시우,곽상기, 저유전체 박막의 제조방법, 러시아연방, 2004102519 (1992)
  • 곽상기,이시우, Method for preparing low dielectric films, 러시아연방, 2004102519 (1992)
  • 이시우,곽상기, 저유전체 박막의 제조방법, EP, 02743932.2 (1992)
  • 이시우,곽상기, 저유전체 박막의 제조방법, -, 02743932.2 (1992)
  • 곽상기,이시우, Method for preparing low dielectric films, EP, 02743932.2 (1992)
  • 이시우,곽상기, 저유전체 박막의 제조방법, 중국, 02813172.X (1992)
  • 곽상기,이시우, Method for preparing low dielectric films, 중국, 02813172.X (1992)
  • 이시우,곽상기, 저유전체 박막의 제조방법, 일본, 2003-511297 (1992)
  • 곽상기,이시우, MEthod for preparing low dielectric films, 일본, 2003-511297 (1992)
  • 이시우,곽상기, 저유전체 박막의 제조방법, USA, 10/480,770 (1992)
  • 곽상기,이시우, Method for preparing low dielectric films, USA, 10/480,770 (1992)
  • 이시우,강상우, 원자층 화학증착법에 의한 금속 실리알루미네이트 박막의 제조방법, 한국, 10-2004-0009244 (1992)
  • 이시우,강상우,한상호, 구리의 화학 증착에 유용한 유기 구리 전구체, 중국, 99802648.4 (1992)
  • 강상우,한상호,이시우, Novel Organocuprous Precursors for Chemical Vapor Deposition of a Copper Film, 중국, 99802648.4 (1992)
  • 이시우,강상우, 이트륨 도핑된 티탄산바륨 박막 및 그의 제조방법, USA, 10/672,753 (1992)
  • 강상우,이시우, Yttrium-doped bismuth titanate thin film and preparation thereof, USA, 10/672,753 (1992)
  • 이시우,강상우,남원희, 유기금속 착체 및 이를 이용한 금속 실리게이트 박막의 증착방법, 일본, 2003-121916 (1992)
  • 강상우,남원희,이시우, Organometal complex and method of depositing a metal silicate thin layer using same, 일본, 2003-121916 (1992)
  • 이시우,강상우,김원규, 반도체 소자용 하프륨 실리케이트 게이트 절연막의 제조방법, 한국, 10-2003-0028198 (1992)
  • 이시우,블라디,아시아,양우영, 유기 금속착물 및 이의 제조방법, 한국, 10-2003-0012842 (1992)
  • 이시우,강상우,남원희, 유기금속 착체 및 이를 이용한 금속 실리게이트 박막의 증착방법, USA, 10/423,337 (1992)
  • 강상우,남원희,이시우, Organometal complex and method of depositing a metal silicate thin layer using same, USA, 10/423,337 (1992)
  • 강상우,이시우, 이트륨-도핑된 티탄산바륨 박막 및 그의 제조방법, 일본, 2003-334481 (1992)
  • 강상우,이시우, Yittrium-doped Bismuth Titanate thin film and preparation thereof, 일본, 2003-334481 (1992)
  • 강상우,이시우, 이트륨이 도핑된 비스무스 티타네이트 박막 및 이의 제조방법, 한국, 10-2002-0059111 (1992)
  • 이시우,최경근,한상호, 액상 유기구리 전구체의 열적안정성 향상 방법, 한국, 10-2000-0011217 (1992)
  • 이시우,강상우, 원자층 화학증착법을 이용한 다성분 박막의 증착, 한국, 10-2002-0046449 (1992)
  • 이시우,강상우, 액상 주입법에 의한 유기발광소자의 발광층 형성방법, 한국, 10-2002-0044847 (1992)
  • 곽상기,이시우, .Method for preparing Low dielecltric films, -, PCT/KR2002/0012 (1992)
  • 이시우,곽상기, 저유전체 박막의 제조방법, -, PCT/KR2002/0012 (1992)
  • 이시우,곽상기, 저유전체 박막의 제조방법, PCT, PCT/KR2002/0012 (1992)
  • 이시우,심정진,Vladisla,아시아, 유기금속 발광화합물, 한국, 10-2002-0043553 (1992)
  • 이시우,강상우, 반도체 소자용 산화막 제조방법, 한국, 10-2002-0045176 (1992)
  • 이시우,심정진,Vladisla,아시아, 유기금속 발광 화합물, 한국, 10-2002-0035541 (1992)
  • 이시우,김대환,양우영, 유기금속 화학증착법에 의한 PZT 박막의 제조방법, 한국, 10-2002-0034246 (1992)
  • 이시우,강상우, 유기금속 착화합물 및 이를 이용한 금속 실리케이트 박막의 증착방법, 한국, 10-2002-0022641 (1992)
  • 곽상기,이시우, Method for preparing low dielectric films, 대만, 91115011 (1992)
  • 이시우,곽상기, 저유전체 박막의 제조방법, 대만, 91115011 (1992)
  • 이시우,곽상기, 저유전체 박막의 제조방법, 한국, 10-2002-0028660 (1992)
  • 이시우,이정현,김주영, 루테늄/루테늄 산화물 박막 형성 방법, 한국, 10-2000-0024586 (1992)
  • 이시우,강상우,Krisyuk,Assia, 금속 착체 및 이를 이용한 금속 나노점의 제조방법, 한국, 10-2002-0016724 (1992)
  • 이시우,김대환,강상우, 유기 금속착물 및 이의 제조방법, 한국, 10-2002-0014041 (1992)
  • 이시우,강상우,김원규, 반도체 소자용 금속 실리케이트 게이트 절연막의 제조방법, 한국, 10-2002-0010396 (1992)
  • 이시우,강상우, 란타늄 착체 및 이를 이용한 비엘티 박막의 제조방법, 일본, 2002-184458 (1992)
  • 강상우,이시우, Lanthanum complex and method for the preparation of a BLT thin layer using same, 일본, 2002-184458 (1992)
  • 이시우,강상우, 란타늄 착체 및 이를 이용한 비엘티 박막의 제조방법, USA, 10/143,355 (1992)
  • 강상우,이시우, Lanthanum complex and method for the preparation of a BLT thin layer using same, USA, 10/143,355 (1992)
  • 이시우,이청, 절연막의 저온 증착법, 일본, 2003-121920 (1992)
  • 이시우,이청, 절연막의 저온 증착법, USA, 10/423,338 (1992)
  • 이시우,이청, 절연막의 저온 증착법, 한국, 10-2002-0022640 (1992)
  • 이시우,이청, 계면특성이 우수한 박막 트랜지스터의 제조방법, 한국, 10-2002-0004378 (1992)
  • 이시우,강상우,한상호, 구리의 화학 증착에 유용한 유기 구리 전구체, EP, 99959960.8 (1992)
  • 이시우,강상우,한상호, 구리의 화학 증착에 유용한 유기 구리 전구체, -, 99959960.8 (1992)
  • 강상우,한상호,이시우, Novel Organocuprous Precursors for Chemical Vapor Deposition of a Copper Film, EP, 99959960.8 (1992)
  • 이시우,김대환, 유기금속 화학증착법에 의한 피젯티 박막의 제조방법, 한국, 10-2001-0052452 (1992)
  • 이시우,강상우, 란타늄 착체 및 이를 이용한 비엘티 박막의 제조방법, 한국, 10-2001-0054054 (1992)
  • 이시우,박종민, 저유전체 박막 제조방법, 한국, 10-2001-0038050 (1992)
  • 이시우,강상우, 퍼지단계를 필요로 하지 않는 원자층 화학증착법, 한국, 10-2001-0034555 (1992)
  • 이시우,이정현, (바륨,스트론튬) 삼산화티탄 박막의 제조방법, 한국, 10-1998-0052703 (1992)
  • 이시우,강상우,한상호, 구리의 화학증착에 유용한 액상 전구체, 한국, 10-1998-0043331 (1992)
  • 이시우,김효욱,강상우, 구리박막의 식각 방법, 한국, 10-1998-0029877 (1992)
  • 이시우,박재욱,이선우,이정현, 비에스티 박막 제조용 바륨, 스트론튬 및 티타늄 전구체의 단일 용액, 한국, 10-1999-0008306 (1992)
  • 이시우,박재욱,이선우,이정현, 비에스티 박막 제조용 바륨, 스트론튬 및 티타늄 전구체의 단일 용액, 한국, 10-1998-0008314 (1992)
  • 이시우,박준원,이정현,윤종호, 디메틸알루미늄 하이드라이드의 점도저하방법(Method for Lowing the Viscosity of Dimethylaluminum Hydride), USA, 09/124,741 (1992)
  • 이시우,이정현,윤종호, 알루미늄 박막의 제조에 전구체로 유용한 디메틸 알루미늄 하이드라이드의 점도저하 방법, 한국, 10-1998-0013602 (1992)
  • 이시우,이정현,윤종호, 디멜틸알루미늄하이드라이드의 점도 저하방법, 한국, 10-1998-0001386 (1992)
  • 이시우,박재욱,강상우,조두환, 구리의 화학증착에 유용한 유기구리 전구체, 일본, 1999-10990 (1992)
  • 박재욱,강상우,조두환,이시우, Organocuprous precursors for chemical vapor deposition of a copper film, 일본, 1999-10990 (1992)
  • 이시우,박재욱,강상우,조두환, 구리의 화학증착에 유용한 유기구리 전구체, USA, 09/233,573 (1992)
  • 박재욱,강상우,조두환,이시우, Organocuprous precursors for chemical vapor deposition of a copper film, USA, 09/233,573 (1992)
  • 이시우,박재욱,강상우,조두환, 구리의 화학증착에 유용한 유기구리 전구체, 한국, 10-1999-0001235 (1992)
  • 이시우,박재욱,조두환, 구리의 화학증착에 유용한 유기구리 착화합물 전구체, 한국, 10-1998-0001388 (1992)
  • 이시우,박준원,이정현,윤종호, 알루미늄 박막의 제조에 전구체로 유용한 디메틸 알루미늄 하이드라이드의 점도저하 방법, 한국, 10-1997-0053949 (1992)
  • 이시우,윤종호, 화학증착에 의한 개구 충전 방법, 일본, 1998-240012 (1992)
  • 이시우,윤종호, 화학증착에 의한 개구 충전 방법, USA, 09/139,701 (1992)
  • 이시우,심재용, 유기금속 화학증착용 전구체, 한국, 10-2000-0012690 (1992)
  • 이시우,심재용, 유기금속착체, 이의 제조방법 및 이를 이용한 유기금속화학증착법, 일본, 2000-132543 (1992)
  • 심재용,이시우, Organometallic complex process for the preparation thereof and metal organic chemical vapor deposition using same, 일본, 2000-132543 (1992)
  • 이시우,심재용, 유기금속착물, 이의 제조방법 및 이를 이용한 유기금속화학증착법, USA, 09/560,448 (1992)
  • 심재용,이시우, Organometallic complex process for the preparation thereof and metal organic chemical vapor deposition using same, USA, 09/560,448 (1992)
  • 이시우,심재용, 유기금속착물, 이의 제조방법 및 이를 이용한 유기금속화학증착법, 한국, 10-2000-0023027 (1992)
  • 이시우,심재용, 유기금속 착물, 한국, 10-2000-0003371 (1992)
  • 이시우,강상우,한상호, 구리의 화학 증착에 유용한 유기 구리 전구체, 러시아연방, 2000118774.00 (1992)
  • 강상우,한상호,이시우, Novel Organocuprous Precursors for Chemical Vapor Deposition of a Copper Film, 러시아연방, 2000118774.00 (1992)
  • 이시우,강상우,한상호, 구리의 화학 증착에 유용한 유기 구리 전구체, -, PCT/KR1999/0074 (1992)
  • 이시우,강상우,한상호, 구리의 화학 증착에 유용한 유기 구리 전구체, PCT, PCT/KR1999/0074 (1992)
  • 강상우,한상호,이시우, Novel Organocuprous Precursors for Chemical Vapor Deposition of a Copper Film, -, PCT/KR1999/0074 (1992)
  • 이시우,강상우,한상호, 구리의 화학 증착에 유용한 유기 구리 전구체, 대만, 88122014 (1992)
  • 이시우,강상우,한상호, 구리의 화학 증착에 유용한 유기 구리 전구체, 대만, 88122014 (1992)
  • 강상우,한상호,이시우, Novel Organocuprous Precursors for Chemical Vapor Deposition of a Copper Film, 대만, 88122014 (1992)
  • 이시우,강상우,한상호, 구리의 화학 증착에 유용한 유기 구리 전구체, 일본, 2000-612535 (1992)
  • 강상우,한상호,이시우, Novel Organocuprous Precursors for Chemical Vapor Deposition of a Copper Film, 일본, 2000-612535 (1992)
  • 이시우,강상우,한상호, 구리의 화학 증착에 유용한 유기 구리 전구체, USA, 제09/600,240호 (1992)
  • 강상우,한상호,이시우, Novel Organocuprous Precursors for Chemical Vapor Deposition of a Copper Film, USA, 제09/600,240호 (1992)
  • 이시우,강상우,한상호, 구리의 화학 증착에 유용한 유기 구리 전구체, 한국, 10-1999-0013236 (1992)
  • 이시우,이정현,정진희,심재용, Ti 전구체 및 그 합성방법, 한국, 10-1999-0015557 (1992)
  • 이시우,이정현,심재용, 바륨 또는 스트론튬 착제, 한국, 10-2000-0050258 (1992)
  • 이시우,이정현, 렌즈 형태의 다공성 금속 스폰지가 장착된 순간기화기, 한국, 20-2000-0019821 (1992)
  • 이시우,윤주영, 반도체 소자용 확산방지막 제조 방법, USA, 09/006,948 (1992)
  • 이시우,윤주영, 반도체 소자용 확산방지막 제조 방법, 한국, 10-1997-0000973 (1992)
  • 이시우,김동환,박영배, 입자생성이 억제된 실리콘의 화학증착 방법, 한국, 10-1995-0014767 (1992)